Title:
SINGLE-CRYSTAL SILICON-CARBIDE SUBSTRATE AND POLISHING SOLUTION
Document Type and Number:
WIPO Patent Application WO/2013/051555
Kind Code:
A1
Abstract:
The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface that has an atomic step-and-terrace structure comprising atomic steps and terraces derived from the structure of the crystal. In said atomic step-and-terrace structure, the arithmetical mean deviation of profile of the front edge of each atomic step is at most 20% of the height of said atomic step.
Inventors:
YOSHIDA IORI (JP)
TAKEMIYA SATOSHI (JP)
TOMONAGA HIROYUKI (JP)
TAKEMIYA SATOSHI (JP)
TOMONAGA HIROYUKI (JP)
Application Number:
PCT/JP2012/075504
Publication Date:
April 11, 2013
Filing Date:
October 02, 2012
Export Citation:
Assignee:
ASAHI GLASS CO LTD (JP)
International Classes:
C09K3/14; C30B29/36; C30B33/10; H01L21/205; H01L21/304
Domestic Patent References:
| WO2009063844A1 | 2009-05-22 |
Foreign References:
| JP2008068390A | 2008-03-27 | |||
| JP2011049496A | 2011-03-10 | |||
| JP2009238891A | 2009-10-15 |
Other References:
TSUNENOBU KIMOTO ET AL.: "Step-Controlled Epitaxial Growth of SiC and Step Dynamics", JOURNAL OF THE JAPANESE ASSOCIATION OF CRYSTAL GROWTH, vol. 23, no. L, 1996, pages 8 - 15
Attorney, Agent or Firm:
HAMADA Yuriko et al. (JP)
Yuriko Hamada (JP)
Yuriko Hamada (JP)
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Claims: