SINGLE-CRYSTAL SUBSTRATE, GROUP III ELEMENT NITRIDE CRYSTAL OBTAINED USING SAME, AND PROCESS FOR PRODUICNG GROUP III ELEMENT NITRIDE CRYSTAL

Title:

SINGLE-CRYSTAL SUBSTRATE, GROUP III ELEMENT NITRIDE CRYSTAL OBTAINED USING SAME, AND PROCESS FOR PRODUICNG GROUP III ELEMENT NITRIDE CRYSTAL

Document Type and Number:

WIPO Patent Application WO/2011/087061

Kind Code:

A1

Abstract:

Provided is a substrate on which a large-area thick crystal of a Group III element nitride can be grown while inhibiting cracking. The substrate is a single-crystal substrate for use in growing a Group III element nitride crystal thereon and satisfies relationship (1): -40 < Z2/Z1 < -1 (1) wherein Z1 is the amount of warpage (µm) of the physical shape of the growth surface of the single-crystal substrate and Z2 is the amount of warpage (µm) calculated from the radius of curvature of the crystallographic surface shape of the growth surface of the single crystal.

Inventors:

FUJITO KENJI
UCHIYAMA YASUHIRO

Application Number:

PCT/JP2011/050452

Publication Date:

July 21, 2011

Filing Date:

January 13, 2011

Export Citation:

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Assignee:

MITSUBISHI CHEM CORP (JP)
FUJITO KENJI
UCHIYAMA YASUHIRO

International Classes:

C30B29/38; C23C16/34; C30B19/04; C30B25/20; H01L21/205

Foreign References:

JP2007197276A	2007-08-09
JP2009126727A	2009-06-11
JP2000022212A	2000-01-21
JP2005340747A	2005-12-08
JP2008124151A	2008-05-29
JP2009167057A	2009-07-30
JP2009161436A	2009-07-23
JP2009023861A	2009-02-05
JP2010007307A	2010-01-14

Other References: