Title:
SINGLE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SINGLE CRYSTAL SUBSTRATE, AND SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/009182
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a single crystal substrate with which a silicon carbide growth layer with less crystal defects can be formed; a method for producing a single crystal substrate capable of efficiently producing the single crystal substrate; and a silicon carbide substrate having a high-quality silicon carbide growth layer. Provided is a single crystal substrate characterized by comprising a ground substrate that includes, inside thereof, a first crystal plane and a second crystal plane facing the first crystal plane, and that has a plurality of grooves extending in a <110> direction, the single crystal substrate being characterized in that the angle formed by the first crystal plane and the second plane is over 70.6°. Further it is preferred that the angle formed by the first crystal plane and the second crystal plane is 100° to 176°.
Inventors:
WATANABE YUKIMUNE (JP)
KAWANA NORIYASU (JP)
KAWANA NORIYASU (JP)
Application Number:
PCT/JP2018/024615
Publication Date:
January 10, 2019
Filing Date:
June 28, 2018
Export Citation:
Assignee:
SEIKO EPSON CORP (JP)
International Classes:
C30B29/36; C23C16/42; C30B25/18; C30B29/04; C30B29/06; H01L21/205
Foreign References:
| JP2004189598A | 2004-07-08 | |||
| JP2006196631A | 2006-07-27 |
Attorney, Agent or Firm:
WATANABE Kazuaki et al. (JP)
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