Title:
SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2011/108706
Kind Code:
A1
Abstract:
In order to correct warping that occurs as a result of the formation of a multilayer film, a single crystal substrate is disclosed that has a heat denatured layer disposed within either a first region (10D) or a second region (10U), which are obtained by dividing the substrate into two equal parts in the thickness direction, and that is curved in a manner such that the surface of the region in which the heat denatured layer is provided forms a convex. Also disclosed are a production method therefor, a production method for a single crystal substrate with a multilayer film that uses said single crystal substrate, and a device production method using said production method.
Inventors:
AIDA HIDEO (JP)
AOTA NATSUKO (JP)
HOSHINO HITOSHI (JP)
FURUTA KENJI (JP)
HAMAMOTO TOMOSABURO (JP)
HONJO KEIJI (JP)
AOTA NATSUKO (JP)
HOSHINO HITOSHI (JP)
FURUTA KENJI (JP)
HAMAMOTO TOMOSABURO (JP)
HONJO KEIJI (JP)
Application Number:
PCT/JP2011/055076
Publication Date:
September 09, 2011
Filing Date:
March 04, 2011
Export Citation:
Assignee:
NAMIKI PRECISION JEWEL CO LTD (JP)
DISCO CORP (JP)
AIDA HIDEO (JP)
AOTA NATSUKO (JP)
HOSHINO HITOSHI (JP)
FURUTA KENJI (JP)
HAMAMOTO TOMOSABURO (JP)
HONJO KEIJI (JP)
DISCO CORP (JP)
AIDA HIDEO (JP)
AOTA NATSUKO (JP)
HOSHINO HITOSHI (JP)
FURUTA KENJI (JP)
HAMAMOTO TOMOSABURO (JP)
HONJO KEIJI (JP)
International Classes:
C30B29/20; H01L21/20; C30B33/02; H01L21/268
Foreign References:
| JPH0794408A | 1995-04-07 | |||
| JPH1140849A | 1999-02-12 | |||
| JP2002324758A | 2002-11-08 | |||
| JP2006196558A | 2006-07-27 | |||
| JP3250438B2 | 2002-01-28 | |||
| JP2006347776A | 2006-12-28 | |||
| JP2008006492A | 2008-01-17 |
Other References:
JPN. J. APPL. PHYS., vol. 32, 1993, pages 1528 - 1533
J. CRYST. GROWTH., vol. 272, no. 1-4, 2004, pages 94 - 99
E. ARMOUR: "LED growth compatibility between 2'', 4'' and 6'' sapphire", SEMICONDUCTOR TODAY COMPOUNDS & ADVANCED SILICON, vol. 4, no. 3, April 2009 (2009-04-01)
J. CRYST. GROWTH., vol. 272, no. 1-4, 2004, pages 94 - 99
E. ARMOUR: "LED growth compatibility between 2'', 4'' and 6'' sapphire", SEMICONDUCTOR TODAY COMPOUNDS & ADVANCED SILICON, vol. 4, no. 3, April 2009 (2009-04-01)
Attorney, Agent or Firm:
IAT WORLD PATENT LAW FIRM (JP)
Eye アット international patent business corporation (JP)
Eye アット international patent business corporation (JP)
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Claims: