Title:
SINGLE PHOTON DETECTOR IN THE NEAR INFRARED USING AN INGAAS/INP AVALANCHE PHOTODIODE OPERATED WITH A BIPOLAR RECTANGULAR GATING SIGNAL.
Document Type and Number:
WIPO Patent Application WO/2013/002430
Kind Code:
A1
Abstract:
The present invention relates to a single photon detector (SPD) at telecom wavelength of 1.55 μm based on InGaAs/InP avalanche photodiode (APD). In order to operate the SPD at a low after-pulse noise, a DC bias voltage lower than the breakdown voltage is applied to an InGaAs/InP APD. A bipolar rectangular gating signal is superimposed with the DC bias voltage and applied to the APD so as to exceed the breakdown voltage during the gate-on time of each period of the gate signal. The use of the bipolar rectangular gating signal enabling us to operate the APD well below the breakdown voltage during the gate-off time, thereby make the release of the trapped charge carriers faster and then reduces the after-pulse noise. As a result, it permits to increase the repetition rate of the SPD.
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Inventors:
BOUZID ABDESSATTAR (KR)
MOON SUNG WOOK (KR)
YI DONG HOON (KR)
KIM SE MIN (KR)
MOON SUNG WOOK (KR)
YI DONG HOON (KR)
KIM SE MIN (KR)
Application Number:
PCT/KR2011/004696
Publication Date:
January 03, 2013
Filing Date:
June 28, 2011
Export Citation:
Assignee:
KOREA INST SCI & TECH (KR)
BOUZID ABDESSATTAR (KR)
MOON SUNG WOOK (KR)
YI DONG HOON (KR)
KIM SE MIN (KR)
BOUZID ABDESSATTAR (KR)
MOON SUNG WOOK (KR)
YI DONG HOON (KR)
KIM SE MIN (KR)
International Classes:
G01J3/443
Domestic Patent References:
WO2009115956A2 | 2009-09-24 |
Foreign References:
US20090039237A1 | 2009-02-12 | |||
US20090072876A1 | 2009-03-19 | |||
US20050061986A1 | 2005-03-24 | |||
US20090008564A1 | 2009-01-08 |
Attorney, Agent or Firm:
KIM, Sun-Young (10th Floor 80-6,Susong-Dong, Chongro-Ku, Seoul 110-727, KR)
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