SINGLE PHOTON DETECTOR IN THE NEAR INFRARED USING AN INGAAS/INP AVALANCHE PHOTODIODE OPERATED WITH A BIPOLAR RECTANGULAR GATING SIGNAL.

WIPO Patent Application WO/2013/002430

A1

The present invention relates to a single photon detector (SPD) at telecom wavelength of 1.55 μm based on InGaAs/InP avalanche photodiode (APD). In order to operate the SPD at a low after-pulse noise, a DC bias voltage lower than the breakdown voltage is applied to an InGaAs/InP APD. A bipolar rectangular gating signal is superimposed with the DC bias voltage and applied to the APD so as to exceed the breakdown voltage during the gate-on time of each period of the gate signal. The use of the bipolar rectangular gating signal enabling us to operate the APD well below the breakdown voltage during the gate-off time, thereby make the release of the trapped charge carriers faster and then reduces the after-pulse noise. As a result, it permits to increase the repetition rate of the SPD.

JPS63208732	OPTICAL MEASURING INSTRUMENT
JP7018632	Ultraviolet light emitting materials and their uses
JPWO2005083416	An analyzer and analysis method that analyzes absorption, emission, and scattering spectra almost simultaneously with the mass spectrum, and a mass spectrometer and analysis method that uses an electrospray ionization method.

BOUZID ABDESSATTAR (KR)
MOON SUNG WOOK (KR)
YI DONG HOON (KR)
KIM SE MIN (KR)

PCT/KR2011/004696

January 03, 2013

June 28, 2011

Click for automatic bibliography generation  

KOREA INST SCI & TECH (KR)
BOUZID ABDESSATTAR (KR)
MOON SUNG WOOK (KR)
YI DONG HOON (KR)
KIM SE MIN (KR)

G01J3/443

WO2009115956A2

2009-09-24

US20090039237A1	2009-02-12
US20090072876A1	2009-03-19
US20050061986A1	2005-03-24
US20090008564A1	2009-01-08

KIM, Sun-Young (10th Floor 80-6,Susong-Dong, Chongro-Ku, Seoul 110-727, KR)

View/Download PDF      PDF Help

Previous Patent: HYDRAULIC CONTROL VALVE FOR CONSTRUCTION MACHINERY

Next Patent: MOBILE TERMINAL AND DISPLAY CONTROL METHOD THEREOF