SINGLE TRANSISTOR RARE EARTH MANGANITE FERROELECTRIC NONVOLATILE MEMORY CELL

Title:

SINGLE TRANSISTOR RARE EARTH MANGANITE FERROELECTRIC NONVOLATILE MEMORY CELL

Document Type and Number:

WIPO Patent Application WO2002082510

Kind Code:

A8

Abstract:

A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same.

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Inventors:

GNADINGER FRED P (US)

Application Number:

PCT/US2001/013095

Publication Date:

May 13, 2004

Filing Date:

August 24, 2001

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Assignee:

GNADINGER FRED P (US)
COVA TECHNOLOGIES INC (US)

International Classes:

G11C11/22; H01L21/28; H01L21/8246; H01L21/8247; H01L27/105; H01L27/115; H01L29/51; H01L29/78; H01L29/788; H01L29/792; H01L21/02; (IPC1-7): H01L21/00

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