SINTERED CU-GA ALLOY SPUTTERING TARGET, METHOD FOR PRODUCING THE TARGET, LIGHT-ABSORBING LAYER FORMED FROM SINTERED CU-GA ALLOY SPUTTERING TARGET, AND CIGS SOLAR CELL USING THE LIGHT-ABSORBING LAYER

Title:

SINTERED CU-GA ALLOY SPUTTERING TARGET, METHOD FOR PRODUCING THE TARGET, LIGHT-ABSORBING LAYER FORMED FROM SINTERED CU-GA ALLOY SPUTTERING TARGET, AND CIGS SOLAR CELL USING THE LIGHT-ABSORBING LAYER

Document Type and Number:

WIPO Patent Application WO/2011/010529

Kind Code:

A1

Abstract:

Disclosed is a sintered Cu-Ga alloy sputtering target which is characterized by being composed of a sintered body of a Cu-Ga alloy powder that has a Ga concentration of 20-60 at% with the balance made up of Cu and unavoidable impurities. The sintered Cu-Ga alloy sputtering target is also characterized in that the sintered body has a relative density of not less than 97%, an average crystal grain size of 5-30 μm and an oxygen content of not more than 400 ppm. It is also effective for the sintered Cu-Ga alloy sputtering target to have an oxygen concentration of not more than 400 ppm and a uniform composition. The target may be produced by a powder production method and hot pressing method of a starting material powder. The Cu-Ga target is free from compositional segregation and no particle adheres to a film that is obtained by sputtering after long-time sputtering. Also disclosed is a method for producing the sintered Cu-Ga alloy sputtering target.

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Inventors:

IKISAWA MASAKATSU (JP)
TAKAMI HIDEO (JP)
TAMURA TOMOYA (JP)

Application Number:

PCT/JP2010/061048

Publication Date:

January 27, 2011

Filing Date:

June 29, 2010

Export Citation:

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Assignee:

JX NIPPON MINING & METALS CORP (JP)
IKISAWA MASAKATSU (JP)
TAKAMI HIDEO (JP)
TAMURA TOMOYA (JP)

International Classes:

C23C14/34; B22F1/00; B22F3/14; C22C9/00; C22C28/00

Foreign References:

JP2000073163A	2000-03-07
JP2008138232A	2008-06-19
JPS6119749A	1986-01-28
JP2009287092A	2009-12-10

Attorney, Agent or Firm:

OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)

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