Title:
SINTERED OXIDE BODY AND SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2014/021334
Kind Code:
A1
Abstract:
Provided is a sintered oxide body for a high-quality and high-yield IGZO sputtering target that is most suitable for use in oxide semiconductor films, said sintered oxide body enabling the improvement of fluctuations in properties of an IGZO thin film and also enabling the improvement of the occurrence of cracking during the production of a target and during sputtering.
A sintered oxide body which contains at least In, Ga and Zn, has a homologous crystal structure represented by the formula: InGaZnO4, and has a crystal grain diameter of 5 μm or less, a relative density of 95% or more and bend fracture strength of 100 MPa or more.
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Inventors:
OMI KENJI (JP)
HARA SHINICHI (JP)
KOUGO MASANORI (JP)
ITOH KENICHI (JP)
SHIBUTAMI TETSUO (JP)
HARA SHINICHI (JP)
KOUGO MASANORI (JP)
ITOH KENICHI (JP)
SHIBUTAMI TETSUO (JP)
Application Number:
PCT/JP2013/070632
Publication Date:
February 06, 2014
Filing Date:
July 30, 2013
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
C04B35/00; C23C14/34; H01L21/363
Domestic Patent References:
| WO2011040028A1 | 2011-04-07 | |||
| WO2009148154A1 | 2009-12-10 |
Foreign References:
| JP2011105563A | 2011-06-02 |
Attorney, Agent or Firm:
SENMYO, Kenji et al. (JP)
Spring name Kenji (JP)
Spring name Kenji (JP)
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