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Title:
SLURRY FOR CMP
Document Type and Number:
WIPO Patent Application WO/2015/019849
Kind Code:
A1
Abstract:
 The problem addressed by the present invention is to provide a slurry for CMP, with which it is possible to suppress polishing scratches and dishing, and to achieve a higher polishing speed and cleaning performance. This slurry for CMP is used when polishing films and is used by mixing at the time of polishing a polishing material slurry containing a polishing material, a dispersant and water, with an additive solution containing an additive which includes carboxylic acid or water-soluble organic polymer having a carboxylate group, inorganic acid or inorganic acid salt and water, characterized in that the polishing particles (10) used in the polishing material are particles having a core/shell structure, the core layer (2) containing an oxide of at least one element selected from Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th and alkaline earth metals, and the shell layer (4) containing cerium oxide.

Inventors:
GOAN KAZUYOSHI (JP)
OKUYAMA OKUSHI (JP)
FUJITA MICHIYO (JP)
FUJIEDA YOICHI (JP)
Application Number:
PCT/JP2014/069421
Publication Date:
February 12, 2015
Filing Date:
July 23, 2014
Export Citation:
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Assignee:
KONICA MINOLTA INC (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
WO2012032461A12012-03-15
Foreign References:
JP2011108811A2011-06-02
JP2003297781A2003-10-17
Attorney, Agent or Firm:
KOYO INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Mitsuaki international patent firm (JP)
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