Title:
SLURRY COMPOSITION FOR POLISHING SILICON OXIDE FILM, AND POLISHING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2020/180061
Kind Code:
A1
Abstract:
The invention of the present application relates to a slurry composition for CMP, and a polishing method using same and, more specifically, provides a slurry composition for CMP, and a polishing method using same, which are capable of minimizing scratches and increasing polishing performance for a silicon oxide film by removing metal foreign matters and the zeta potential of colloidal silica that is a polishing material, and which are capable of polishing by freely adjusting a selection ratio with respect to the silicon oxide film, a silicon nitride film, and a polysilicon film by adjusting the additive content and the polishing material content, and which can thereby be usefully applied to a semiconductor process for removing unevenness in the silicon oxide film and to a semiconductor manufacturing process requiring selective removal of the silicon oxide film and the polysilicon film with respect to the silicon nitride film.
Inventors:
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
KIM SEONG HWAN (KR)
LEE SEUNG HYUN (KR)
KIM SEONG HWAN (KR)
Application Number:
PCT/KR2020/002934
Publication Date:
September 10, 2020
Filing Date:
March 02, 2020
Export Citation:
Assignee:
YOUNG CHANG CHEMICAL CO LTD (KR)
International Classes:
C09G1/02; C09K3/14; H01L21/3105
Domestic Patent References:
| WO2009032096A1 | 2009-03-12 |
Foreign References:
| KR101628878B1 | 2016-06-16 | |||
| JP2013074036A | 2013-04-22 | |||
| KR20120067701A | 2012-06-26 | |||
| KR101409889B1 | 2014-06-19 |
Other References:
See also references of EP 3936582A4
Attorney, Agent or Firm:
HAEDAM IP GROUP (KR)
Download PDF: