Title:
SMALL FORM FACTOR MAGNETIC SHIELD FOR MAGNETORESTRICTIVE RANDOM ACCESS MEMORY (MRAM)
Document Type and Number:
WIPO Patent Application WO/2014/123783
Kind Code:
A3
Abstract:
Some implementations provide a die that includes a magnetoresistive random access memory (MRAM) cell array that includes several MRAM cells. The die also includes a first ferromagnetic layer positioned above the MRAM cell array, a second ferromagnetic layer positioned below the MRAM cell array, and several vias positioned around at least one MRAM cell. The via comprising a ferromagnetic material. In some implementations, the first ferromagnetic layer, the second ferromagnetic layer and the several vias define a magnetic shield for the MRAM cell array. The MRAM cell may include a magnetic tunnel junction (MTJ). In some implementations, the several vias traverse at least a metal layer and a dielectric layer of the die. In some implementations, the vias are through substrate vias. In some implementations, the ferromagnetic material has high permeability and high B saturation.
Inventors:
GU SHIQUN (US)
ZHANG RONGTIAN (US)
RAMACHANDRAN VIDHYA (US)
KIM DONG WOOK (US)
ZHANG RONGTIAN (US)
RAMACHANDRAN VIDHYA (US)
KIM DONG WOOK (US)
Application Number:
PCT/US2014/014214
Publication Date:
October 16, 2014
Filing Date:
January 31, 2014
Export Citation:
Assignee:
QUALCOMM INC (US)
International Classes:
H01L23/552; H01L23/64; H01L27/22; H01L43/02
Foreign References:
| US6888184B1 | 2005-05-03 | |||
| US20040222511A1 | 2004-11-11 | |||
| US20090178833A1 | 2009-07-16 |
Attorney, Agent or Firm:
LOZA, Julio (LLP305 North Second Avenue #12, Upland California, US)
Download PDF:
Previous Patent: REMOVABLE ORTHODONTIC RETAINER
Next Patent: DYNAMIC OPERATIONG MODES FOR HYBRID ELECTRIC VEHICLES
Next Patent: DYNAMIC OPERATIONG MODES FOR HYBRID ELECTRIC VEHICLES