Field of the Invention The invention relates to novel compounds based on thieno[3,2-b]thiophene- 2,5-dione and/or furo[3,2-b]furan-2,5-dione or their thioketone derivatives, methods for their preparation and intermediates used therein, mixtures and formulations containing them, the use of the compounds, mixtures and formulations as semiconductor in organic electronic (OE) devices,

especially in organic photovoltaic (OPV) devices and organic

photodetectors (OPD), and to OE, OPV and OPD devices comprising these compounds, mixtures or formulations.

Background and Prior Art

In recent years there has been growing interest in the use of organic semiconductors, including conjugated polymers and small molecules, for various electronic applications. One particular area of importance is the field of organic photovoltaics (OPV). Organic semiconductors (OSCs) have found use in OPVs as they allow devices to be manufactured by solution-processing techniques such as spin casting, dip coating or ink jet printing. Solution processing can be carried out cheaper and on a larger scale compared to the evaporative techniques used to make inorganic thin film devices. Numerous small molecules have been developed for solution processable OPV devices as disclosed for example in Thuc-Quyen Nguyen et al., Chem. Mater. 2011 , 23, 470-482. However, device power conversion efficiency is still generally low. Two recent examples have demonstrated an important step towards higher power conversion efficiencies: squarine based small molecules combined with C ₇₀ fullerenes have shown a power conversion efficiency of 5.2 % in a solution processed OPV device as disclosed in Stephen R. Forrest et al., Adv. Ener. Mater. 2011 , 1, 184-187, and DPP based small molecules combined with PCBM-C60 fullerenes have shown a power conversion efficiency of 4.1 % in a solution processed OPV device as disclosed in Loser S. et al.; J. Am.

Chem. Soc. 2011 , 133, 8142-8145. Another particular area of importance is the field of organic thin film transistors (OTFTs) or organic field effect transistors (OFETs), which are used for example in RFID tags or in backplanes of liquid crystal displays. Compared to the classical, Si-based FETs, organic TFTs can be fabricated much more cost-effectively by solution coating methods such as spin- coating, drop casting, dip-coating, and more efficiently, ink-jet printing.

Solution processing of OSCs requires the molecular materials to be soluble enough in non-toxic solvents, stable in the solution state, easy to crystallise when solvents are evaporated, and provide high charge carrier mobility with low off current.

However, the OSC materials that have been suggested in prior art for use in OPV devices do still suffer from certain drawbacks. For example many polymers suffer from limited solubility in commonly used organic solvents, which can inhibit their suitability for device manufacturing methods based on solution processing, or show only limited power conversion efficiency in OPV bulk-hetero-junction devices, or have only limited charge carrier mobility, or are difficult to synthesize and require synthesis methods which are unsuitable for mass production.

In case of OSC materials for OFETs and OTFTs, the currently available OSC materials do also still have some major drawbacks, like a low photo and environment stability particularly in solution states, and a low temperature of the phase transition and melting point. Also for future OLED backplane applications, which demand higher source and drain current, the mobility and processibility of currently available materials needs further improvement.

Therefore, there is still a need for organic semiconducting (OSC) materials that are easy to synthesize, especially by methods suitable for mass production, show good structural organization and film-forming properties, exhibit good electronic properties, especially a high charge carrier mobility, good processibility, especially a high solubility in organic solvents, and high stability in air.

For use in OPV cells, there is a need for OSC materials having a low bandgap, which enable improved light harvesting by the photoactive layer and can lead to higher cell efficiencies, compared to the polymers from prior art. For use in OTFTs, there is a need for materials that show good electronic properties, especially high charge carrier mobility, good processability and high thermal and environmental stability, especially a high solubility in organic solvents. It was an aim of the present invention to provide compounds for use as organic semiconducting materials that do not have the drawbacks of prior art materials as described above, are easy to synthesize, especially by methods suitable for mass production, and do especially show

advantageous properties, especially for OPV and OTFT use, as described above. Another aim of the invention was to extend the pool of OSC materials available to the expert. Other aims of the present invention are immediately evident to the expert from the following detailed description.

The inventors of the present invention have found that one or more of the above aims can be achieved by providing monomeric compounds (small molecules) containing thieno[3,2-b]thiophene-2,5-dione-3,6-diyl or furo[3,2- b]furan-2,5-dione-3,6-diyl repeating units and their thioketone derivatives having the following structure (the numbers in the first formula indicate the positions on the thienothiophene or furofuran core):

It was found that conjugated polymers based on these units show good processability and high solubility in organic solvents, and are thus especially suitable for large scale production using solution processing methods. At the same time, they show a low bandgap, high charge carrier mobility, high external quantum efficiency in BHJ solar cells, good morphology when used in p/n-type blends e.g. with fullerenes, high oxidative stability, and are promising materials for organic electronic OE devices, especially for OPV devices with high power conversion efficiency.

DE 3917323 A1 discloses 2,5-biscyanimino-2,5-dihydrothieno(3,2- b)thiophene in the doped form with metal or in a charge transfer complex, and the use of the charge transfer complex in antistatic finishing, electrode and storage materials in batteries, for the production of solar cells or the conversion of radiation. DE 3917323 A1 further discloses the synthesis of this compound starting from the educt thieno[3,2-b]thiophene-2,5-dione having a H or halogen atom or a methyl group in 3- and/or 6-position.

Guenther, E.; Huenig, S.; Chemische Berichte 1992, 125, 1235-41 discloses 2,5-biscyanimino-2,5-dihydrothieno(3,2-b)thiophene as multistep redox system, and also discloses its synthesis starting from the educt thieno[3,2-b]thiophene-2,5-dione having a H or halogen atom or a methyl or thiomethyl group in 3- and/or 6-position.

JP 04-338761 A discloses an electrophotographic body comprising a broad variety of charge transfer materials, including also a generic formula that covers substituted thieno[3,2-b]thiophene-2,5-dione and furo[3,2-b]furan- 2,5-dione as well as their 2,5-biscyanimino derivatives. Specifically disclosed are 3,6-bis-(t-butanoyl)-thieno[3,2-b]thiophene-2,5-dione and furo[3,2-b]furan-2,5-dione-3,6-dicarboxylic acid dioctyl ester.

WO 2007/003520 A1 discloses pyrrolo[3,2-b]pyrrole-2,5-dione derivatives for use as fluorescent dye in inks, colourants, pigmented plastics for coatings, non-impact-printing materials, colour filters, cosmetics, polymeric ink particles, toners, as fluorescent tracers, in colour changing media, dye lasers and electroluminescent devices. The generic formula disclosed therein does also encompass furo[3,2-b]furan-2,5-dione that is substituted with a cycloalkyl or phenyl group in 3-position and with a cycloalkyi, phenyl, aryl or heteroaryl group in 6-position.

US 3,749,740, US 3,780,064, US 3,714,173, US 3,821 ,397, Pattenden, G. et al.; J. Chem. Soc. Perkin Trans. 1 1991, 2363-2372 and Foden, F. R. et al.; J. Med. Chem. 1975, 18, 199-203 disclose furo[3,2-b]furan-2,5-dione (therein also named pulvinic acid lactone) with substituted phenyl or pyridine rings in 3- and 6-position as an intermediate in the synthesis of thiolpulvinic acid derivatives for use as anti-arthritic drugs.

Lohrisch, H. J. et al.; Liebigs Annalen der Chemie 1986, 195-204, report a pulvinic acid lactone (furo[3,2-b]furan-2,5-dione) substituted with naphthyl and methoxy phenyl rings in 3- and 6-postion which can be obtained from terphenyl quinone dyes.

Jerram, W. A.; Can. J. Chem. 1975, 53, 727-737 discloses the orange fluorescent metabolite cochliodinone, which corresponds to a furo[3,2- b]furan-2,5-dione having substituted indole groups in 3- and 6-position.

However, compounds as claimed in the present invention and their use as organic semiconductors in OE devices, especially in OFET or OPV devices, have not been disclosed in prior art. Summary of the Invention

The invention relates to compounds of formula I

RMAr -(ArV(ArVU-(Ar ⁴ ) _d -(ArV(Ar ⁶ ) _r R ² I wherein

U is a divalent group of the following structure

X is O or S,

Y is O or S,

Ar ^1"6 independently of each other, and on each occurrence identically or differently, denote -CY ¹ =CY ² -, -C≡C-, or aryl or heteroaryl that preferably has 5 to 30 ring atoms and is optionally substituted by one or more groups R ¹ , or one or more of Ar ^1"6 denote U,

R ¹ , R ² independently of each other denote H, F, Br, CI, -CN, -NC, -NCO, - NCS, -OCN, -SCN, -C(0)NR°R°°, -C(0)X°, -C(O)R°, -C(0)OR°, -0-C(0)R°, -NH ₂ , -NR°R ⁰⁰ , -SH, -SR°, -S0 ₃ H, -SO ₂ R°, -OH, -NO ₂ , - CF ₃ , -SF ₅ , P-Sp-, or optionally substituted silyl, carbyl or

hydrocarbyl with 1 to 40 C atoms that is optionally substituted and optionally comprises one or more hetero atoms, and wherein one or more C atoms are optionally replaced by a hetero atom,

R°, R ⁰⁰ independently of each other denote H or optionally substituted C1-40 carbyl or hydrocarbyl,

P is a polymerisable or crosslinkable group,

Sp is a spacer group or a single bond,

X° is halogen, preferably F, CI or Br,

Y ¹ , Y ² independently of each other denote H, F, CI or CN, a-f are independently of each other 0, 1 , 2 or 3, wherein at least one of a-f is different from 0, wherein, if X is S and Y is O and a=b=e=f=0 and c=d=1 , then Ar ³ and Ar" are different from phenylene that is optionally substituted by R ¹ , and if X is O and Y is O, then at least one of Ar ³ and Ar ⁴ is different from phenylene, pyridine, naphthalene and indole which are optionally substituted by R ¹ . The invention further relates to the use of the compounds of formula I or of a formulation comprising one or more compounds of formula I, as organic semiconductor.

The invention further relates to a formulation comprising one or more novel compounds of formula I as described above and below and one or more solvents, preferably selected from organic solvents.

Preferably the formulation comprises one or more compounds of formula I, one or more organic binders, or precursors thereof, preferably having a permittivity ε at 1 ,000 Hz and 20°C of 3.3 or less, and optionally one or more solvents.

The invention further relates to the use of the compounds and formulations according to the present invention as charge transport, semiconducting, electrically conducting, photoconducting or light emitting material, or in an optical, electrooptical, electronic, electroluminescent or photoluminescent device, or in a component of such a device or in an assembly comprising such a device or component.

The invention further relates to a charge transport, semiconducting, electrically conducting, photoconducting or light emitting material comprising a compound or formulation according to the present invention.

The invention further relates to an optical, electrooptical, electronic, electroluminescent or photoluminescent device, or a component thereof, or an assembly comprising it, which comprises a compound or formulation, or comprises a charge transport, semiconducting, electrically conducting _. , photoconducting or light emitting material, according to the present invention.

The optical, electrooptical, electronic, electroluminescent and

photoluminescent devices include, without limitation, organic field effect transistors (OFET), organic thin film transistors (OTFT), organic light emitting diodes (OLED), organic light emitting transistors (OLET), organic photovoltaic devices (OPV), organic photodetectors (OPD)organic solar cells, laser diodes, Schottky diodes, and photoconductors.

The components of the above devices include, without limitation, charge injection layers, charge transport layers, interlayers, planarising layers, antistatic films, polymer electrolyte membranes (PEM), conducting substrates and conducting patterns.

The assemblies comprising such devices or components include, without limitation, integrated circuits (IC), radio frequency identification (RFID) tags or security markings or security devices containg them, flat panel displays or backlights thereof, electrophotographic devices, electrophotographic recording devices, organic memory devices, sensor devices, biosensors and biochips.

In addition the compounds and formulations of the present invention can be used as electrode materials in batteries and in components or devices for detecting and discriminating DNA sequences.

Detailed Description of the Invention

The compounds of formula I are especially suitable as (electron) acceptor in p-type semiconducting materials or mixtures, and for the preparation of mixtures of p-type and n-type semiconductors which are useful for application in BHJ OPV devices, furthermore as p-type semiconductor in OTFTs and OFETs.

In addition, they show the following advantageous properties:

i) This invention uses organic semiconductors based upon core structures with two fused five-membered rings, in which the quinoidal structure of the core is pre-established. This results in an organic semiconductor with increased quinoidal character and therefore a lower band gap, thus resulting in improved light harvesting properties.

ii) Additional solubility can be introduced into the organic semiconductor by inclusion of Ar group containing solubilising groups.

iii) The units of thieno[3,2-b]thiophene-2,5-dione and furo[3,2-b]furan-2,5- dione are planar structures that enable strong pi-pi stacking in the solid state leading to better improved charge transport properties in the form of higher charge carrier mobility.

iv) The units of furo[3,2-b]furan-2,5-dione and thieno[3,2-b]thiophene-2,5- dione increase the intermolecular interaction due to their respective carbonyl functionality, thus enabling strong pi-pi stacking in the solid state leading to better improved charge transport properties in the form of higher charge carrier mobility.

v) Additional fine-tuning of the electronic energies (HOMO/LUMO levels) by either careful selection of Ar unit on each side of thieno[3,2-b]thiophene- 2,5-dione or furo[3,2-b]furan-2,5-dione core.

The compounds of formula I are easy to synthesize and exhibit several advantageous properties, like a low bandgap, a high charge carrier mobility, a high solubility in organic solvents, a good processability for the device manufacture process, a high oxidative stability and a long lifetime in electronic devices.

Above and below, the term "polymer" generally means a molecule of high relative molecular mass, the structure of which essentially comprises the multiple repetition of units derived, actually or conceptually, from molecules of low relative molecular mass (PAC, 1996, 68, 2291). The term "oligomer" generally means a molecule of intermediate relative molecular mass, the structure of which essentially comprises a small plurality of units derived, actually or conceptually, from molecules of lower relative molecular mass (PAC, 1996, 68, 2291). In a preferred sense according to the present invention a polymer means a compound having > 1 , preferably≥ 5 repeating units, and an oligomer means a compound with > 1 and < 10, preferably < 5, repeating units.

Above and below, in a structural unit or group of a compound an asterisk ("*") denotes a linkage to an adjacent structural unit or group.

The terms "repeating unit" and "monomeric unit" mean the constitutional repeating unit (CRU), which is the smallest constitutional unit the repetition of which constitutes a regular macromolecule, a regular oligomer molecule, a regular block or a regular chain (PAC, 1996, 68, 2291).

The terms "donor" and "acceptor", unless stated otherwise, mean an electron donor or electron acceptor, respectively. "Electron donor" means a chemical entity that donates electrons to another compound or another group of atoms of a compound. "Electron acceptor" means a chemical entity that accepts electrons transferred to it from another compound or another group of atoms of a compound, (see also U.S. Environmental Protection Agency, 2009, Glossary of technical terms,

http://www.eDa.qov/oust/cat/TUMGLOSS.HTM).

The term "leaving group" means an atom or group (charged or uncharged) that becomes detached from an atom in what is considered to be the residual or main part of the molecule taking part in a specified reaction (see also PAC, 1994, 66, 1134).

Preferred leaving groups are selected from the group consisting of F, Br, CI, - SiR'FrR'", -SnR'R"^", -BR'R", -B(OR')(OR"), -B(OH) ₂ , O-tosylate, O-triflate, O- mesylate, O-nonaflate, -SiMe ₂ F, -SiMeF ₂ , -O-SO ₂ -R', wherein R", R" and R'" have independently of each other one of the meanings of R° as given in formula I or one of the preferred meanings as described above and below, and preferably denote alkyl with 1 to 20 C atoms or aryl with 4 to 20 C atoms, and two of R', R" and R"' may also form a ring together with the hetero atom to which they are attached, and "Me" denotes methyl.

Unless stated otherwise, the molecular weight is given as the number average molecular weight M _n or weight average molecular weight M _w , which is determined by gel permeation chromatography (GPC) against polystyrene standards in eluent solvents such as tetrahydrofuran,

trichloromethane (TCM, chloroform), chlorobenzene or 1, 2, 4-trichloro- benzene. Unless stated otherwise, 1,2,4-trichlorobenzene is used as solvent. The degree of polymerization, also referred to as total number of repeating units, n, means the number average degree of polymerization given as n = M _n /Mu, wherein M _n is the number average molecular weight and Mu is the molecular weight of the single repeating unit, see J. M. G. Cowie, Polymers: Chemistry & Physics of Modem Materials, Blackie, Glasgow, 1991.

The term "conjugated" means a compound containing mainly C atoms with sp ² -hybridisation (or optionally also sp-hybridisation), which may also be replaced by hetero atoms. In the simplest case this is for example a compound with alternating C-C single and double (or triple) bonds, but does also include compounds with units like 1 ,3-phenylene. "Mainly" means in this connection that a compound with naturally (spontaneously) occurring defects, which may lead to interruption of the conjugation, is still regarded as a conjugated compound.

The term "carbyl group" as used above and below denotes any monovalent or multivalent organic radical moiety which comprises at least one carbon atom either without any non-carbon atoms (like for example -C≡C-), or optionally combined with at least one non-carbon atom such as N, O, S, P, Si, Se, As, Te or Ge (for example carbonyl etc.). The term "hydrocarbyl group" denotes a carbyl group that does additionally contain one or more H atoms and optionally contains one or more hetero atoms like for example N, O, S, P, Si, Se, As, Te or Ge.

The term "hetero atom" means an atom in an organic compound that is not a H- or C-atom, and preferably means N, O, S, P, Si, Se, As, Te or Ge. A carbyl or hydrocarbyl group comprising a chain of 3 or more C atoms may be straight-chain, branched and/or cyclic, including spiro and/or fused rings.

Preferred carbyl and hydrocarbyl groups include alkyl, alkoxy, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy and alkoxycarbonyloxy, each of which is optionally substituted and has 1 to 40, preferably 1 to 25, very preferably 1 to 18 C atoms, furthermore optionally substituted aryl or aryloxy having 6 to 40, preferably 6 to 25 C atoms, furthermore alkylaryloxy, arylcarbonyl, aryloxycarbonyl, arylcarbonyloxy and aryloxycarbonyloxy, each of which is optionally substituted and has 6 to 40, preferably 7 to 40 C atoms, wherein all these groups do optionally contain one or more hetero atoms, preferably selected from N, O, S, P, Si, Se, As, Te and Ge. The carbyl or hydrocarbyl group may be a saturated or unsaturated acyclic group, or a saturated or unsaturated cyclic group. Unsaturated acyclic or cyclic groups are preferred, especially aryl, alkenyl and alkynyl groups (especially ethynyl). Where the Ci-C ₄₀ carbyl or hydrocarbyl group is acyclic, the group may be straight-chain or branched. The C1-C40 carbyl or hydrocarbyl group includes for example: a C C ₄ o alkyl group, a C1-C40 alkoxy or oxaalkyl group, a C2-C40 alkenyl group, a C2-C40 alkynyl group, a C3-C ₄₀ ally ⁾ group, a C4-C40 alkyldienyl group, a C ₄ -C ₄ o polyenyl group, a Ce- C18 aryl group, a C ₆ -C ₄ o alkylaryl group, a C ₆ -C ₄ o arylalkyl group, a C4-C40 cycloalkyl group, a C4-C40 cycloalkenyl group, and the like. Preferred among the foregoing groups are a C1-C20 alkyl group, a C ₂ -C ₂ o alkenyl group, a C ₂ -C ₂ o alkynyl group, a C ₃ -C ₂₀ allyl group, a C ₄ -C ₂ o alkyldienyl group, a C ₆ -Ci ₂ aryl group, and a C ₄ -C ₂₀ polyenyl group, respectively. Also included are combinations of groups having carbon atoms and groups having hetero atoms, like e.g. an alkynyl group, preferably ethynyl, that is substituted with a silyl group, preferably a trialkylsilyl group.

Aryl and heteroaryl preferably denote a mono-, bi- or tricyclic aromatic or heteroaromatic group with 4 to 30 ring C atoms that may also comprise condensed rings and is optionally substituted with one or more groups L, wherein L is selected from halogen, -CN, -NC, -NCO, -NCS, -OCN, -SCN, - C(=0)NR°R°°, -C(=O)X°, -C(=0)R°, -C(0)OR°, -O-C(O)R ⁰ , -NH ₂ ,

-NR°R ⁰⁰ , -SH, -SR°, -S0 ₃ H, -S0 ₂ R°, -OH, -NO ₂ , -CF ₃ , -SF ₅ , P-Sp-, optionally substituted silyl, or carbyl or hydrocarbyl with 1 to 40 C atoms that is optionally substituted and optionally comprises one or more hetero atoms, and is preferably alkyl, alkoxy, thiaalkyl, alkylcarbonyl,

alkoxycarbonyl or alkoxycarbonyloxy with 1 to 20 C atoms that is optionally fluorinated, and R°, R ⁰⁰ , X°, P and Sp have the meanings given above and below.

Very preferred substituents L are selected from halogen, most preferably F, or alkyl, alkoxy, oxaalkyl, thioalkyl, fluoroalkyl and fluoroalkoxy with 1 to 12 C atoms or alkenyl, alkynyl with 2 to 12 C atoms. Especially preferred aryl and heteroaryl groups are phenyl in which, in addition, one or more CH groups may be replaced by N, naphthalene, thiophene, selenophene, thienothiophene, dithienothiophene, fluorene and oxazole, all of which can be unsubstituted, mono- or polysubstituted with L as defined above. Very preferred rings are selected from pyrrole, preferably N-pyrrole, furan, pyridine, preferably 2- or 3-pyridine, pyrimidine, pyridazine, pyrazine, triazole, tetrazole, pyrazole, imidazole, isothiazole, thiazole, thiadiazole, isoxazole, oxazole, oxadiazole, thiophene preferably 2- thiophene, selenophene, preferably 2-selenophene, thieno[3,2-b]thiophene, indole, isoindole, benzofuran, benzothiophene, benzodithiophene, quinole, 2-methylquinole, isoquinole, quinoxaline, quinazoline, benzotriazole, benzimidazole, benzothiazole, benzisothiazole, benzisoxazole,

benzoxadiazole, benzoxazole, benzothiadiazole, all of which can be unsubstituted, mono- or polysubstituted with L as defined above. Further examples of heteroaryl groups are those selected from the following formulae

An alkyl or alkoxy radical, i.e. where the terminal CH2 group is replaced by - 0-, can be straight-chain or branched. It is preferably straight-chain, has 2, 3, 4, 5, 6, 7 or 8 carbon atoms and accordingly is preferably ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, ethoxy, propoxy, butoxy, pentoxy, hexoxy, heptoxy, or octoxy, furthermore methyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, nonoxy, decoxy, undecoxy, dodecoxy, tridecoxy or tetradecoxy, for example.

An alkenyl group, wherein one or more CH ₂ groups are replaced by - CH=CH- can be straight-chain or branched. It is preferably straight-chain, has 2 to 10 C atoms and accordingly is preferably vinyl, prop-1-, or prop- 2-enyl, but-1-, 2- or but-3-enyl, pent- -, 2-, 3- or pent-4-enyl, hex-1-, 2-, 3-, 4- or hex-5-enyl, hept-1-, 2-, 3-, 4-, 5- or hept-6-enyl, oct-1-, 2-, 3-, 4-, 5-, 6- or oct-7-enyl, non-1-, 2-, 3-, 4-, 5-, 6-, 7- or non-8-enyl, dec- -, 2-, 3-, 4-, 5-, 6-, 7-, 8- or dec-9-enyl.

Especially preferred alkenyl groups are C2-C7-I E-alkenyl, C ₄ -C ₇ -3E-alkenyl, C ₅ -C ₇ -4-alkenyl, C ₆ -C ₇ -5-alkenyl and C ₇ -6-alkenyl, in particular C ₂ -C ₇ -1E- alkenyl, C -C ₇ -3E-alkenyl and C ₅ -C ₇ -4-alkenyl. Examples for particularly W

- 14 -

preferred alkenyl groups are vinyl, 1 E-propenyl, 1 E-butenyl, lE-pentenyl, 1 E-hexenyl, 1 E-heptenyl, 3-butenyl, 3E-pentenyl, 3E-hexenyl, 3E-heptenyl, 4-pentenyl, 4Z-hexenyl, 4E-hexenyl, 4Z-heptenyl, 5-hexenyl, 6-heptenyl and the like. Groups having up to 5 C atoms are generally preferred.

An oxaalkyl group, i.e. where one CH ₂ group is replaced by -0-, is preferably straight-chain 2-oxapropyl (=methoxymethyl), 2- (=ethoxymethyl) or 3-oxabutyl (=2-methoxyethyl), 2-, 3-, or 4-oxapentyl, 2-, 3-, 4-, or 5- oxahexyl, 2-, 3-, 4-, 5-, or 6-oxaheptyl, 2-, 3-, 4-, 5-, 6- or 7-oxaoctyl, 2-, 3-,0 4-, 5-, 6-, 7- or 8-oxanonyl or 2-, 3-, 4-, 5-, 6-,7-, 8- or 9-oxadecyl, for

example. Oxaalkyl, i.e. where one CH ₂ group is replaced by -O-, is preferably straight-chain 2-oxapropyl (=methoxy methyl), 2- (=ethoxymethyl) or 3-oxabutyl (=2-methoxyethyl), 2-, 3-, or 4-oxapentyl, 2-, 3-, 4-, or 5- oxahexyl, 2-, 3-, 4-, 5-, or 6-oxaheptyl, 2-, 3-, 4-, 5-, 6- or 7-oxaoctyl, 2-, 3-,5 4-, 5-, 6-, 7- or 8-oxanonyl or 2-, 3-, 4-, 5-, 6-,7-, 8- or 9-oxadecyl, for

example.

In an alkyl group wherein one CH ₂ group is replaced by -O- and one by - C(O)-, these radicals are preferably neighboured. Accordingly these

0 radicals together form a carbonyloxy group -C(0)-O- or an oxycarbonyl group -O-C(O)-. Preferably this group is straight-chain and has 2 to 6 C atoms. It is accordingly preferably acetyloxy, propionyloxy, butyryloxy, pentanoyloxy, hexanoyloxy, acetyloxymethyl, propionyloxymethyl, butyryloxymethyl, pentanoyloxymethyl, 2-acetyloxyethyl, 2-propionyloxy-5 ethyl, 2-butyryloxyethyl, 3-acetyloxypropyl, 3-propionyloxypropyl,

4-acetyloxy butyl, methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, butoxycarbonyl, pentoxycarbonyl, methoxycarbonylmethyl, ethoxy- carbonylmethyl, propoxycarbonylmethyl, butoxycarbonylmethyl,

2-(methoxycarbonyl)ethyl, 2-(ethoxycarbonyl)ethyl, 2-(propoxy- 0 carbonyl)ethyl, 3-(methoxycarbonyl)propyl, 3-(ethoxycarbonyl)propyl,

4-(methoxycarbonyl)-butyl.

An alkyl group wherein two or more CH ₂ groups are replaced by -O- and/or -C(0)0- can be straight-chain or branched. It is preferably straight-chain 5 and has 3 to 12 C atoms. Accordingly it is preferably bis-carboxy-methyl,

2,2-bis-carboxy-ethyl, 3,3-bis-carboxy-propyl, 4,4-bis-carboxy-butyl, 5,5-bis- carboxy-pentyl, 6,6-bis-carboxy-hexyl, 7,7-bis-carboxy-heptyl, 8,8-bis- carboxy-octyl, 9,9-bis-carboxy-nonyl, 10,10-bis-carboxy-decyl, bis- (methoxycarbonyl)-methyl, 2,2-bis-(methoxycarbonyl)-ethyl, 3,3-bis- (methoxycarbonyl)-propyl, 4,4-bis-(methoxycarbonyl)-butyl, 5,5-bis- (methoxycarbonyl)-pentyl, 6,6-bis-(methoxycarbonyl)-hexyl, 7,7-bis- (methoxycarbonyl)-heptyl, 8,8-bis-(methoxycarbonyl)-octyl, bis- (ethoxycarbonyl)-methyl, 2,2-bis-(ethoxycarbonyl)-ethyl, 3,3-bis- (ethoxycarbonyl)-propyl, 4,4-bis-(ethoxycarbonyl)-butyl, 5,5-bis- (ethoxycarbonyl)-hexyl.

A thioalkyi group, i.e where one CH ₂ group is replaced by -S-, is preferably straight-chain thiomethyl (-SCH ₃ ), 1-thioethyl (-SCH ₂ CH ₃ ), 1-thiopropyl (= - SCH ₂ CH ₂ CH ₃ ), 1- (thiobutyl), l-(thiopentyl), l-(thiohexyl), l-(thioheptyl), 1- (thiooctyl), l-(thiononyl), l-(thiodecyl), l-(thioundecyl) or l-(thiododecyl), wherein preferably the CH ₂ group adjacent to the sp ² hybridised vinyl carbon atom is replaced.

A fluoroalkyl group is preferably straight-chain perfluoroalkyl CiF ₂ i+i, wherein i is an integer from 1 to 15, in particular CF _3l C ₂ F ₅ , C ₃ F ₇ , C ₄ F ₉ , CsF , C ₆ F ₁₃ , C Fi5 or C ₈ Fi _7l very preferably C ₆ Fi ₃ .

The above-mentioned alkyl, alkoxy, alkenyl, oxaalkyi, thioalkyi, carbonyl and carbonyloxy groups can be achiral or chiral groups. Particularly preferred chiral groups are 2-butyl (=1-methylpropyl), 2-methylbutyl, 2-methylpentyl, 3- methylpentyl, 2-ethylhexyl, 2-propylpentyl, in particular 2-methylbutyl, 2- methylbutoxy, 2-methylpentoxy, 3-methylpentoxy, 2-ethyl-hexoxy, 1- methylhexoxy, 2-octyloxy, 2-oxa-3-methylbutyl, 3-oxa-4-methyl-pentyl, 4- methylhexyl, 2-hexyl, 2-octyl, 2-nonyl, 2-decyl, 2-dodecyl, 6-meth-oxyoctoxy, 6-methyloctoxy, 6-methyloctanoyloxy, 5-methylheptyloxy-carbonyl, 2- methylbutyryloxy, 3-methylvaleroyloxy, 4-methylhexanoyloxy, 2- chloropropionyloxy, 2-chloro-3-methylbutyryloxy, 2-chloro-4-methyl-valeryl- oxy, 2-chloro-3-methylvaleryloxy, 2-methyl-3-oxapentyl, 2-methyl-3-oxa- hexyl, 1-methoxypropyl-2-oxy, 1-ethoxypropyl-2-oxy, 1-propoxypropyl-2-oxy, 1-butoxypropyl-2-oxy, 2-fluorooctyloxy, 2-fluorodecyloxy, 1 ,1 ,1 -trifluoro-2- octyloxy, 1 ,1 ,1-trifluoro-2-octyl, 2-fluoromethyloctyloxy for example. Very preferred are 2-hexyl, 2-octyl, 2-octyloxy, 1 ,1 ,1-trifluoro-2-hexyl, 1,1 ,1- trifluoro-2-octyl and 1,1 ,1-trifluoro-2-octyloxy.

Preferred achiral branched groups are isopropyl, isobutyl (=methylpropyl) _: isopentyl (=3-methylbutyl), tert. butyl, isopropoxy, 2-methyl-propoxy and 3- methylbutoxy.

In another preferred embodiment of the present invention, R and R ² are independently of each other selected from primary, secondary or tertiary alkyl or alkoxy with 1 to 30 C atoms, wherein one or more H atoms are optionally replaced by F, or aryl, aryloxy, heteroaryl or heteroaryloxy that is optionally alkylated or alkoxylated and has 4 to 30 ring atoms. Very preferred groups of this type are selected from the group consisting of the following formulae

wherein "ALK" denotes optionally fluorinated, preferably linear, alkyl or alkoxy with 1 to 20, preferably 1 to 12 C-atoms, in case of tertiary groups very preferably 1 to 9 C atoms, and the dashed line denotes the link to the ring to which these groups are attached. Especially preferred among these groups are those wherein all ALK subgroups are identical.

-CY ¹ =CY ² - is preferably -CH=CH-, -CF=CF- or -CH=C(CN)-.

Halogen is F, CI, Br or I, preferably F, CI or Br. o

II

-CO-, -C(=O)- and -C(O)- denote a carbonyl group, i.e.

The compounds may also be substituted with a polymerisable or

crosslinkable reactive group, which is optionally protected during the process of forming the polymer. Particularly preferred compounds of this type are those compounds of formula I wherein R ¹ and/or R ² denote P-Sp. These compounds are particularly useful as semiconductors or charge transport materials, as they can be crosslinked via the groups P, for example by polymerisation in situ, during or after processing the polymer into a thin film for a semiconductor component, to yield crosslinked polymer films with high charge carrier mobility and high thermal, mechanical and chemical stability.

Preferably the polymerisable or crosslinkable group P is selected from

C(O)-NH-, CH ₂ =CW ¹ -C(O)-NH-, CH ₃ -CH=CH-O-, (CH ₂ =CH) ₂ CH-OC(O)-, (CH ₂ =CH-CH ₂ ) ₂ CH-0-C(0)-, (CH ₂ =CH) ₂ CH-O-, (CH ₂ =CH-CH ₂ ) ₂ N-,

(CH ₂ =CH-CH ₂ ) ₂ N-C(O)-, HO-CW ² W ³ -, HS-CW W ³ -, HW ² N-, HO-CW ² W ³ - NH-, CH ₂ =CH-(C(O)-O) _k1 -Phe-(O) _k2 -, CH ₂ =CH-(C(O)) _k1 -Phe-(O) _k2 -, Phe- CH=CH-, HOOC-, OCN-, and WWWSi-, with W ¹ being H, F, CI, CN, CF _3l phenyl or alkyl with 1 to 5 C-atoms, in particular H, CI or CH ₃ , W ² and W ³ being independently of each other H or alkyl with 1 to 5 C-atoms, in particular H, methyl, ethyl or n-propyl, W ⁴ , W ⁵ and W ⁶ being independently of each other CI, oxaalkyl or oxacarbonylalkyl with 1 to 5 C-atoms, W ⁷ and W ⁸ being independently of each other H, CI or alkyl with 1 to 5 C-atoms, Phe being 1 ,4-phenylene that is optionally substituted by one or more groups L as defined above, ki, k ₂ and k ₃ being independently of each other 0 or 1, k ₃ preferably being 1 , and l j being an integer from 1 to 10. Alternatively P is a protected derivative of these groups which is non- reactive under the conditions described for the process according to the present invention. Suitable protective groups are known to the ordinary expert and described in the literature, for example in Green, "Protective Groups in Organic Synthesis", John Wiley and Sons, New York (1981), like for example acetals or ketals.

Especially preferred groups P are CH ₂ =CH-C(O)-O-, CH ₂ =C(CH ₃ )-C(O)-O-,

CH ₂ =CF-C(O)-O-, CH ₂ =CH-O-, (CH ₂ =CH) ₂ CH-O-C(O)-, (CH ₂ =CH) ₂ CH-O-,

W ² HC CH - and W ^{2 H} 2)kr°- , ₀ r protected derivatives thereof. Further preferred groups P are selected from the group consisting of vinyloxy, acrylate, methacrylate, fluoroacrylate, chloracrylate, oxetan and epoxy groups, very preferably from an acrylate or methacrylate group.

Polymerisation of group P can be carried out according to methods that are known to the ordinary expert and described in the literature, for example in D. J. Broer; G. Challa; G. N. Mol, Macromol. Chem, 1991 , 192, 59.

The term "spacer group" is known in prior art and suitable spacer groups Sp are known to the ordinary expert (see e.g. Pure Appl. Chem. 73(5), 888 (2001). The spacer group Sp is preferably of formula Sp'-X', such that P-Sp- is P-Sp'-X'-, wherein

Sp' is alkylene with up to 30 C atoms which is unsubstituted or

mono- or polysubstituted by F, CI, Br, I or CN, it being also possible for one or more non-adjacent CH ₂ groups to be replaced, in each case independently from one another, by -O- , -S-, -NH-, -NR ⁰ -, -SiR°R ⁰⁰ -, -C(O)-, -C(O)O-, -OC(O)-, - OC(O)-O-, -S-C(O)-, -C(O)-S-, -CH=CH- or -C≡C- in such a manner that O and/or S atoms are not linked directly to one another, Χ' is -Ο-, -S-, -C(O)-, -C(0)0-, -OC(O)-, -0-C(0)0-, -C(0)-NR°-, - NR°-C(0)-, -NR°-C(0)-NR ⁰⁰ -, -OCH ₂ -, -CH ₂ 0-, -SCH ₂ -, -CH ₂ S- , -CF ₂ O-, -OCF ₂ -, -CF ₂ S-, -SCF ₂ -, -CF ₂ CH ₂ -, -CH ₂ CF ₂ -, - CF ₂ CF ₂ -, -CH=N-, -N=CH-, -N=N-, -CH=CR ⁰ -, -CY ¹ =CY ² -, - C≡C-, -CH=CH-C(0)0-, -OC(0)-CH=CH- or a single bond, ° and R oo

R :' ' are independently of each other H or alkyl with 1 to 12 C- atoms, and Y ¹ and Y ² are independently of each other H, F, CI or CN.

X' is preferably -0-, -S-, -OCH ₂ -, -CH ₂ 0-, -SCH ₂ -, -CH ₂ S-, -CF ₂ 0-, -OCF ₂ -, - CF ₂ S-, -SCF ₂ - -CH ₂ CH ₂ -, -CF ₂ CH ₂ -, -CH ₂ CF ₂ -, -CF ₂ CF ₂ -, -CH=N-, -N=CH-, -N=N-, -CH=CR ⁰ -, -CY =CY ² -, -C≡C- or a single bond, in particular -0-, -S-, -C≡C-, -CY =CY ² - or a single bond. In another preferred embodiment X' is a group that is able to form a conjugated system, such as -C≡C- or - CY ¹ =CY ² -, or a single bond.

Typical groups Sp ^* are, for example, -(CH ₂ ) _P -, -(CH ₂ CH ₂ 0) _q -CH ₂ CH ₂ -, - CH ₂ CH ₂ -S-CH ₂ CH ₂ - or -CH ₂ CH ₂ -NH-CH ₂ CH ₂ - or -(SiR°R ⁰⁰ -O) _p -, with p being an integer from 2 to 12, q being an integer from 1 to 3 and R° and R ⁰⁰ having the meanings given above.

Preferred groups Sp' are ethylene, propylene, butylene, pentylene, hexylene, heptylene, octylene, nonylene, decylene, undecylene,

dodecylene, octadecylene, ethyleneoxyethylene, methyleneoxybutylene, ethylene-thioethylene, ethylene-N-methyl-iminoethylene, 1-methylalkylene, ethenylene, propenylene and butenylene for example. Another aspect of the invention relates to compounds of formula II wherein U is as defined in formula I,

Ar ⁷ , Ar ⁸ independently of each other, and on each occurrence identically or differently, have one of the meanings of Ar ¹ as given in formula I, or one of the preferred meanings as described above and below, g, h are independently of each other 0, 1 , 2 or 3, and

R ³ , R ⁴ are independently of each other a leaving group, preferably

selected from the group consisting of F, CI, Br, I, H, NR'H, -CH ₂ CI, - CHO, -CH=CH ₂ , -SiR'^'R'", -SnRWR'", -BR'R", -B(OR')(OR"), - B(OH) ₂ , O-tosylate, O-triflate, O-mesylate, O-nonaflate, -SiMe ₂ F, - SiMeF ₂ , -0-S0 ₂ -R', -CR'=CR"R"', -C≡CH, -C≡CSiR ^, R ^,, R ^,, \ -ZnX° and P-Sp-, wherein X°, P and Sp are as defined above, R', R" and R"' have independently of each other one of the meanings of R° as given in formula I or one of the preferred meanings as described above and below, and preferably denote alkyl with 1 to 20 C atoms or aryl with 4 to 20 C atoms, and two of R', R" and R'" may also form a ring together with the hetero atom to which they are attached, and "Me" denotes methyl, wherein, if X is S and Y is O, then at least one of g and h is not 0, and if X is O and Y is O and both g and h are not 0, then at least one of Ar ⁷ and Ar ⁸ is different from phenylene, pyridine, naphthalene and indole which are optionally substituted by R as defined in claim 1.

Especially preferred are compounds of formula II, wherein g+h>0.

The compounds of formula II are useful as educts for the preparation of compounds of formula I.

In the compounds of formula I and II, the group U preferably denotes thieno[3,2-b]thiophene-2,5-dione-3,6-diyl or furo[3,2-b]furan-2,5-dione-3,6- diyl, wherein the ketone functionality at the 2- and 5-positions is optionally a thioketone functionality. Accordingly U in formula I and II is preferably selected from the following formulae fa-Id:

Especially preferred are groups U of formula la and lb.

In the compounds of formula I and II, Ar ^1"6 and Ar ^7"8 are selected such that they form a fully conjugated core group together with the group U _. In the compounds of formula I the groups R ¹ and R ² can be selected to improve the properties of the compound, e.g. by increasing the solubility. In the compounds of formula II reactive sites are introduced by the groups R ³ and R ⁴ for use in aryl-aryl coupling reactions. Very preferred are compounds of formula I, wherein R ¹ and R ²

independently of each other denote H or straight-chain, branched or cyclic alkyl with 1 to 35 C atoms, in which one or more non-adjacent C atoms are optionally replaced by -0-, -S-, -C(O)-, -C(0)-0-, -O-C(O)-, -0-C(O)-O-, - CR°=CR ⁰⁰ - or -C≡C- and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or denote aryl, heteroaryl, aryloxy,

heteroaryloxy, arylcarbonyl, heteroarylcarbonyl, arylcarbonyloxy,

heteroarylcarbonyloxy, aryloxycarbonyl and heteroaryloxycarbonyl, each of which has 4 to 30 ring atoms and is optionally substituted by one or more non-aromatic groups L, wherein L is selected from halogen, -CN, -NIC, -NCO, -NCS, -OCN, -SCN, - C(=0)NR°R ⁰⁰ , -C(=O)X°, -C(=0)R°, -C(O)OR°, -0-C(0)R°, -NH ₂ , -NR°R ⁰⁰ , - SH, -SR°, -S0 ₃ H, -SO ₂ R ⁰ , -OH, -N0 ₂ , -CF _3> -SF _5l P-Sp-, or alkyl, alkoxy, thiaalkyi, alkylcarbonyl, alkoxycarbonyl or alkoxycarbonyloxy with 1 to 20 C atoms that is optionally fluorinated, and R°, R ⁰⁰ , X°, P and Sp having the meanings given in formula I.

Preferably Ar ^1"6 in formula I and Ar ⁷ and Ar ⁸ in formula II independently of each other, and on each occurrence identically or differently, denote aryl or heteroaryl, which preferably has 5 to 30 ring atoms and is unsubstituted or substituted, preferably by one or more groups R ¹ as defined above, or denote U.

Further preferred are compounds of formula I wherein one or more of Ar ¹ , Ar ² , Ar ³ and/or one or more of Ar ⁴ , Ar ⁵ and Ar ⁶ are selected from aryl or heteroaryl groups having electron donor properties.

Further preferred are compounds of formula II wherein one or more of Ar ⁷ and/or one or more of Ar ⁸ are selected from aryl or heteroaryl groups having electron donor properties.

Further preferred are compounds of formula I wherein one or more of Ar ¹ , Ar ² . _, Ar ³ and/or one or more of Ar ⁴ , Ar ⁵ and Ar ⁶ denote aryl or heteroaryl, preferably having electron donor properties, selected from the group consisting of formulae D1-D110 listed below.

Further preferred are compounds of formula II wherein or one or more of Ar ⁷ and/or one or more of Ar ⁸ denote aryl or heteroaryl, preferably having electron donor properties, selected from the group consisting of the following formulae

(D9) (D10) (D11) (D12)

(D13) (D14) (D15)

(D16) (D17) (D18)

(D19) (D20) (D21)

(D22) (D23) (D24)

(D28) (D29) (D30)

(D83) (D84) (D85)



(D110)

wherein one of X ¹¹ and X ¹² is S and the other is Se, and R ¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ , R ¹⁶ , R ¹⁷ and R ¹⁸ independently of each other denote H or have one of the meanings of R ¹ as defined above and below.

Further preferred are compounds of formula I wherein one or more of Ar ¹ , Ar ² , Ar ³ and/or one or more of Ar ⁴ , Ar ⁵ and Ar ⁶ are selected from aryl or heteroaryl groups having electron acceptor properties.

Further preferred are compounds of formula II wherein one or more of Ar ⁷ and/or one or more of Ar ⁸ are selected from aryl or heteroaryl groups having electron acceptor properties.

Further preferred are compounds of formula I wherein one or more of Ar ¹ , Ar ² , Ar ³ and/or one or more of Ar ⁴ , Ar ⁵ and Ar ⁶ , and compounds of formula II wherein or one or more of Ar ⁷ and/or one or more of Ar ⁸ , denote aryl or heteroaryl, preferably having electron acceptor properties, selected from the group consisting of the following formulae

(A1) (A2) (A3) (A4)



(A57) wherein one of X ¹¹ and X ¹² is S and the other is Se, and R ¹¹ , R ¹² , R ¹³ , R ¹⁴ and R ⁵ independently of each other denote H or have one of the meanings of R ¹ as defined above and below.

Further preferred are compounds of formula I wherein one or more of Ar ¹ , Ar ² , Ar ³ and/or one or more of Ar ⁴ , Ar ⁵ and Ar ⁶ have one of the meanings of U, and are preferably selected from formulae la, lb, lc and Id.

Further preferred are compounds of formula II wherein one or more of Ar ⁷ and/or one or more of Ar ⁸ have one of the meanings of U, and are preferably selected from formulae la, lb, lc and Id.

In compounds of formula I and II wherein one or more of Ar ^1"6 and Ar ^7,8 denote U, the U groups that are present in these compounds (including the central group U in formula I and II, and all of Ar ^1"8 that denote U) are preferably not linked directly to each other.

In compounds of formula I and II wherein one or more of Ar ^1"6 and Ar ^7,8 denote U, the U groups that are present in these compounds (including the central group U in formula I and II, and all of Ar ^1"8 that denote U) may have the same structure (i.e. they have the same meanings of X and Y) or may have different structure (i.e. they have the different meanings of X and Y). Preferably all groups U present in these compounds have the same structure.

Further preferred are compounds of formula I wherein one or more, preferably all, of Ar ^1"6 are selected from the group consisting of formulae la, lb, Ic, Id, D1 , D5, D6, D8, D13, D14, D15, D16, D19, D28, D68, A3 and A4, most preferably from formulae la, lb, Ic, Id, Id, D1 , D5, D6, D8, and D19.

Further preferred are compounds of formula II wherein one or more, preferably all, of Ar ^7,8 are selected from the group consisting of formulae la, lb, Ic, Id, D1 , D5, D6, D8, D13, D14, D15, D16, D19, D28, D68, A3 and A4, most preferably from formulae la, lb, Ic, Id, Id, D1 , D5, D6, D8, and D19.

Further preferred compounds of formula I are selected from the following subformulae

R ¹ -(Ar ¹ )a-(Ar ² ) _b -(Ar ³ ) _c -U-(Ar ⁴ ) _d -(Ar ⁵ )e-R ² 11 R ¹ -(Ar ¹ )a-(Ar ³ ) _c -U-(Ar ⁴ ) _d -(Ar ⁵ )e-R ² I2

R ¹ -(Ar ¹ )a-(Ar ³ ) _c -U-(Ar ⁴ ) _d -R ² I3 R ¹ -(Ar ³ )c-U-(Ar ⁴ ) _d -R ² I4 R ¹ -(Ar ¹ )a-U-(Ar ³ )c-U-(Ar ⁴ ) _d -R ² I6 R'-iAr^a-iA^b-U-iAr^d-U-CAr^e-CAr^f-R ² I7 wherein R , R ² , Ar ¹ , Ar ² , Ar ³ , Ar ⁴ , Ar ⁵ , Ar ⁶ , a, b, c, d, e and f have the meanings given in formula I or one of the preferred meanings given above and below, and preferably a, b, c, d, e and f denote 1 or 2. Especially preferred are compounds of formulae 11-17 wherein U is selected of formulae la, lb, Ic, Id and Ar ^1"6 are selected of formulae, D1 , D5, D6, D8, D13, D14, D15, D16, D19, D28, D68, A3 and A4, most preferably from formulae D1 , D5, D6, D8 and D19. Further preferred are compounds of formula I and II and their subformulae that are selected from the following list of preferred embodiments: a=1 or 2, c=1 or 2, d=1 or 2, f=1 or 2, and b=e=0,

a=b=0 and e=f=0, and c and d are 1 or 2,

g is 1 or 2 and h is 1 or 2,

g is 0 and h is 0,

one or more of Ar ^1"6 denote U,

one or more of Ar ^7,8 denote U,

one or more, preferably all, of Ar ^1"6 are selected of formulae la, lb, lc, Id, D1 , D5, D6, D8, D13, D14, D15, D16, D19, D28, D68, A3, A4, one or more, preferably all, of Ar ^7,8 are selected of formula la, lb, lc, Id, D1 , D5, D6, D8, D13, D14, D15, D16, D19, D28, D68, A3, A4,

R ¹ and/or R ² are selected from the group consisting of primary alkyl or alkoxy with 1 to 30 C atoms, secondary alkyl or alkoxy with 3 to 30 C atoms, and tertiary alkyl or alkoxy with 4 to 30 C atoms, wherein in all these groups one or more H atoms are optionally replaced by F,

R ¹ and/or R ² are selected from the group consisting of aryl, heteroaryl, aryloxy, heteroaryloxy, each of which is optionally alkylated or alkoxylated and has 4 to 30 ring atoms,

R ¹ and/or R ² are selected from the group consisting of alkyl, alkoxy, alkylcarbonyl, alkoxycarbonyl and alkylcarbonyloxy, all of which are straight-chain or branched, are optionally fluorinated, and have from 1 to 30 C atoms, and aryl, aryloxy, heteroaryl and heteroaryloxy, all of which are optionally alkylated or alkoxylated and have 4 to 30 ring atoms,

R ¹ and/or R ² denote F, CI, Br, I, CN, R ⁵ , -C(0)-R ⁵ , -C(0)-0-R ⁵ , or -O- C(0)-R ⁵ , wherein R ⁵ is straight-chain, branched or cyclic alkyl with 1 to 30 C atoms, in which one or more non-adjacent C atoms are optionally replaced by -0-, -S-, -C(O)-, -C(O)-0-, -O-C(O)-, -0-C(0)-O-, - CR°=CR ⁰⁰ - or -C≡C- and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or R ¹ and/or R ² denote independently of each other aryl, aryloxy, heteroaryl or heteroaryloxy having 4 to 30 ring atoms which is unsubstituted or which is substituted by one or more halogen atoms or by one or more groups R ⁵ , -C(O)-R ⁵ , -C(0)-0-R ⁵ , or - 0-C(0)-R ⁵ wherein R ⁵ is as defined above, - R ⁵ is primary alkyl with 1 to 30 C atoms, very preferably with 1 to 15 C atoms, secondary alkyl with 3 to 30 C atoms, or tertiary alkyl with 4 to 30 C atoms, wherein in all these groups one or more H atoms are optionally replaced by F,

- R ¹ and/or R ² denote H,

- R ³ and/or R ⁴ are selected from the group consisting of CI, Br, I, - SnRT-TR", -B(OR')(OR"), -B(OH) ₂ , O-tosylate, O-triflate, O-mesylate, O- nonaflate, -SiMe ₂ F, -SiMeF _2> -0-S0 ₂ -R\ -CR'=CR"R"', -C≡CH, - C≡CSiR'R"R"', -ZnX° , wherein R', R" and R"' have independently of each other one of the meanings of R° as given in formula I or one of the preferred meanings as described above and below, and preferably denote alkyl with 1 to 20 C atoms or aryl with 4 to 20 C atoms, and two of R', R" and R"' may also form a ring together with the hetero atom to which they are attached, X° is halogen, preferably Br, CI or I, and "Me" denotes methyl,

- R° and R ⁰⁰ are selected from H or Ci-Cio-alkyl.

The compounds of formula I and II can be synthesized according to or in analogy to methods that are known to the skilled person and are described in the literature. Other methods of preparation can be taken from the examples. Preferred and suitable synthesis methods are further described in the reaction schemes shown below, wherein R ^{1 ,2} and Ar ¹ -Ar ⁵ are as defined in formula I.

The synthesis scheme for the thieno[3,2-b]thiophene-2,5-dione based organic semiconductors is shown in Schemes 1 and 2. Scheme 1 illustrates the synthesis of symmetrical thieno[3,2-b]thiophene-2,5-dione based organic semiconductors, whilst Scheme 2 illustrates the synthesis of nonsymmetrical thieno[3,2-b]thiophene-2,5-dione based organic

semiconductors.

The preparation of the 3,6-dibromo-thieno[3,2-b]thiophene-2,5-dione and 3,6-diiodo-thieno[3,2-b]thiophene-2,5-dione has been described in

Guenther, E.; Huenig, S.; Chemische Behchte 1992, 125, 1235-1241. Scheme 1

Scheme 2

Y~Ar ₂ Pd/L

±Base

The synthesis scheme for the furo[3,2-b]furan-2,5-dione based organic semiconductors is shown in Schemes 3 and 4. Scheme 3 illustrates the synthesis of symmetrical furo[3,2- b]furan-2,5-dione based organic semiconductors, whilst Scheme 4 illustrates the synthesis of nonsymmetrical furo[3,2-b]furan-2,5-dione based organic semiconductors

The preparation of 3,6-dibromo-furo[3,2-b]furan-2,5-dione has been described in Stachel, H.-D. et al.; Liebigs Annalen der Chemie 1994, 961- 964. Alternatively, the generic preparation of 3,6-diaryl-furo[3,2-b]furan-2,5- dione has been described, for example, in US 3,780,064.

Scheme 3

35

Pd/L

Y ₂ Ar ₅ -Ar ₆ -R ₂ +Base

Compounds containing two or more thieno[3,2-b]thiophene-2,5-dione groups can be prepared in analogy to Schemes 1 and 2, wherein one or more of Ar ^1"6 denote thieno[3,2-b]thiophene-2,5-dione. For example, symmetrical compounds containing two thieno[3,2-b]thiophene-2,5-dione units can be obtained as shown in Scheme 5.

Scheme 5

002836

- 45 -

Likewise, compounds containing two or more furo[3,2-b]furan-2,5-dione groups can be prepared in analogy to Schemes 3 and 4, wherein one or more of Ar ^1"6 denote furo[3,2-b]furan-2,5-dione. For example, symmetrical compounds containing two furo[3,2-b]furan-2,5-dione units can be obtained as shown in Scheme 6.

Scheme 6

The novel methods of preparing compounds as described above and below and the intermediates used therein are further aspects of the present invention.

Very preferred is a process of preparing a compound of formula I,

comprising the step of reacting a compound of formula II with one or more compounds selected of formula C1 and C2 in an aryl-aryl coupling reaction

R ³ -(Ar ⁷ ) _g -U-(Ar ⁸ ) _h -R ⁴ II

R ¹ -(Ar ¹ ) _a -(ArV(Ar ³ ) _c -R ³ C1

R ⁴ -(Ar ⁴ ) _d -(Ar ⁵ )e-(Ar ⁶ ) _r R ² C2 wherein R ³ and R ⁴ are selected from CI, Br, I, H, NR'H, -SnR'R"R'", - B(OR')(OR"), -B(OH) ₂ , O-tosylate, O-triflate, O-mesylate, O-nonaflate, - SiMe ₂ F, -SiMeF ₂ , -0-S0 ₂ -R', -CR'=CR"R'", -C≡CH, -C^CSiR'^'R"', -ZnX°, and R', R", R"\ X°, R ^{1 ,2} , Ar ^1"6 , a, b, c, d, e, f, g and h are as defined in formula I and II above.

Preferred aryl-aryl coupling methods used in the processes described above and below are Yamamoto coupling, Kumada coupling, Negishi coupling, Suzuki coupling, Stille coupling, Sonogashira coupling, Heck coupling, C-H activation coupling, Ullmann coupling or Buchwald coupling. Especially preferred are Suzuki coupling, Negishi coupling, Stille coupling and Yamamoto coupling. Suzuki coupling is described for example in WO 00/53656 A1. Negishi coupling is described for example in J. Chem. Soc, Chem. Commun., 1977, 683-684. Yamamoto coupling is described in for example in T. Yamamoto et al., Prog. Polym. Sci., 1993, 17, 1153-1205, or WO 2004/022626 A1. For example, when using Yamamoto coupling, compounds of formula II having two reactive halide groups are preferably used. When using Suzuki coupling, compounds of formula II having two reactive boronic acid or boronic acid ester groups or two reactive halide groups are preferably used. When using Stille coupling, compounds of formula II having two reactive stannane groups or two reactive halide groups are preferably used. When using Negishi coupling, compounds of formula II having two reactive organozinc groups or two reactive halide groups are preferably used.

Preferred catalysts, especially for Suzuki, Negishi or Stille coupling, are selected from Pd(0) complexes or Pd(ll) salts. Preferred Pd(0) complexes are those bearing at least one phosphine ligand such as Pd(Ph ₃ P) ₄ . Another preferred phosphine ligand is tris(orf/7o-tolyl)phosphine, i.e. Pd(o-To P) . Preferred Pd(ll) salts include palladium acetate, i.e. Pd(OAc) ₂ . Alternatively the Pd(0) complex can be prepared by mixing a Pd(0) dibenzylideneacetone complex, for example tris(dibenzyl-ideneacetone)dipalladium(0),

bis(dibenzylideneacetone)palladium(0), or Pd(ll) salts e.g. palladium acetate, with a phosphine ligand, for example triphenylphosphine, tns(ortho- tolyl)phosphine or tri(tert-butyl)phosphine. Suzuki coupling is performed in the presence of a base, for example sodium carbonate, potassium carbonate, lithium hydroxide, potassium phosphate or an organic base such as tetraethylammonium carbonate or tetraethylammonium hydroxide. Yamamoto coupling employs a Ni(0) complex, for example bis(1 ,5-cyclooctadienyl) nickel(O).

The invention further relates to a formulation comprising one or more compounds of formula I and one or more solvents, preferably selected from organic solvents.

Preferred solvents are aliphatic hydrocarbons, chlorinated hydrocarbons, aromatic hydrocarbons, ketones, ethers and mixtures thereof. Additional solvents which can be used include 1 ,2,4-trimethylbenzene, 1 ,2,3,4- tetramethyl benzene, pentylbenzene, mesitylene, cumene, cymene, cyclohexylbenzene, diethylbenzene, tetralin, decalin, 2,6-lutidine, 2-fluoro- m-xylene, 3-fluoro-o-xylene, 2-chlorobenzotrifluoride, N,N- dimethylformamide, 2-chloro-6-fluorotoluene, 2-fluoroanisole, anisole, 2,3- dimethylpyrazine, 4-fluoroanisole, 3-fluoroanisole, 3-trifluoro-methylanisole, 2-methylanisole, phenetol, 4-methylansiole, 3-methylanisole, 4-fluoro-3- methylanisole, 2-fluorobenzonitrile, 4-fluoroveratrol, 2,6-dimethylanisole, 3- fluorobenzonitrile, 2,5-dimethylanisole, 2,4-dimethylanisole, benzonitrile, 3,5-dimethylanisole, Ν,Ν-dimethylaniline, ethyl benzoate, 1-fluoro-3,5- dimethoxybenzene, 1-methylnaphthalene, N-methylpyrrolidinone, 3- fluorobenzotrifluoride, benzotrifluoride, dioxane, trifluoromethoxybenzene, 4-fluorobenzotrifluoride, 3-fluoropyridine, toluene, 2-fluorotoluene, 2- fluorobenzotrifluoride, 3-fluorotoluene, 4-isopropylbiphenyl, phenyl ether, pyridine, 4-fluorotoluene, 2,5-difluorotoluene, 1-chloro-2,4-difluorobenzene, 2-fluoropyridine, 3-chlorofIuorobenzene, 3-chlorofluorobenzene, 1-chloro- 2,5-difluorobenzene, 4-chlorofluorobenzene, chlorobenzene, o- dichlorobenzene, 2-chlorofluorobenzene, p-xylene, m-xylene, o-xylene or mixture of o-, m-, and p-isomers. Solvents with relatively low polarity are generally preferred. For inkjet printing solvents with high boiling

temperatures and solvent mixtures are preferred. For spin coating alkylated benzenes like xylene and toluene are preferred. The invention further relates to an organic semiconducting formulation comprising one or more compounds of formula I, one or more organic binders, or precursors thereof, preferably having a permittivity ε at 1 ,000 Hz of 3.3 or less, and optionally one or more solvents.

Combining specified soluble compounds of formula I, especially compounds of the preferred formulae as described above and below, with an organic binder resin (hereinafter also referred to as "the binder") results in little or no reduction in charge mobility of the compounds of formula I, even an increase in some instances. For instance, the compounds of formula I may be dissolved in a binder resin (for example poly(a-methylstyrene) and deposited (for example by spin coating), to form an organic semiconducting layer yielding a high charge mobility. Moreover, a semiconducting layer formed thereby exhibits excellent film forming characteristics and is particularly stable.

If an organic semiconducting layer formulation of high mobility is obtained by combining a compound of formula I with a binder, the resulting formulation leads to several advantages. For example, since the compounds of formula I are soluble they may be deposited in a liquid form, for example from solution. With the additional use of the binder the formulation can be coated onto a large area in a highly uniform manner. Furthermore, when a binder is used in the formulation it is possible to control the properties of the formulation to adjust to printing processes, for example viscosity, solid content, surface tension. Whilst not wishing to be bound by any particular theory it is also anticipated that the use of a binder in the formulation fills in volume between crystalline grains otherwise being void, making the organic semiconducting layer less sensitive to air and moisture. For example, layers formed

according to the process of the present invention show very good stability in OFET devices in air.

The invention also provides an organic semiconducting layer which

comprises the organic semiconducting layer formulation. The invention further provides a process for preparing an organic

semiconducting layer, said process comprising the following steps: (i) depositing on a substrate a liquid layer of a formulation comprising one or more compounds of formula I as described above and below, one or more organic binder resins or precursors thereof, and optionally one or more solvents,

(ii) forming from the liquid layer a solid layer which is the organic

semiconducting layer,

(iii) optionally removing the layer from the substrate. The process is described in more detail below.

The invention additionally provides an electronic device comprising the said organic semiconducting layer. The electronic device may include, without limitation, an organic field effect transistor (OFET), organic light emitting diode (OLED), organic photodetector (OPD), sensor, logic circuit, memory element, capacitor or organic photovoltaic (OPV) cell. For example, the active semiconductor channel between the drain and source in an OFET may comprise the layer of the invention. As another example, a charge (hole or electron) injection or transport layer in an OLED device may comprise the layer of the invention. The formulations according to the present invention and layers formed therefrom have particular utility in OFETs especially in relation to the preferred embodiments described herein.

The semiconducting compound of formula I preferably has a charge carrier mobility, μ, of more than 0.001 cmW ¹ , very preferably of more than 0.01 cmW ¹ , especially preferably of more than 0.1 cm ² V ¹ s ^"1 and most preferably of more than 0.5 cmW ¹ .

The binder, which is typically a polymer, may comprise either an insulating binder or a semiconducting binder, or mixtures thereof may be referred to herein as the organic binder, the polymeric binder or simply the binder.

Preferred binders according to the present invention are materials of low permittivity, that is, those having a permittivity ε of 3.3 or less. The organic binder preferably has a permittivity ε of 3.0 or less, more preferably 2.9 or less. Preferably the organic binder has a permittivity ε at of 1.7 or more. It is especially preferred that the permittivity of the binder is in the range from 2.0 to 2.9. Whilst not wishing to be bound by any particular theory it is believed that the use of binders with a permittivity ε of greater than 3.3, may lead to a reduction in the OSC layer mobility in an electronic device, for example an OFET. In addition, high permittivity binders could also result in increased current hysteresis of the device, which is undesirable.

An example of a suitable organic binder is polystyrene. Further examples of suitable binders are disclosed for example in US 2007/0102696 A1.

Especailly suitable and preferred binders are described in the following.

In one type of preferred embodiment, the organic binder is one in which at least 95%, more preferably at least 98% and especially all of the atoms consist of hydrogen, fluorine and carbon atoms.

It is preferred that the binder normally contains conjugated bonds, especially conjugated double bonds and/or aromatic rings.

The binder should preferably be capable of forming a film, more preferably a flexible film. Polymers of styrene and a-methyl styrene, for example copolymers including styrene, a -methylstyrene and butadiene may suitably be used.

Binders of low permittivity of use in the present invention have few permanent dipoles which could otherwise lead to random fluctuations in molecular site energies. The permittivity ε (dielectric constant) can be determined by the ASTM D150 test method.

The permittivity values given above and below, unless stated otherwise, refer to 1 ,000 Hz and 20°C.

It is also preferred that in the present invention binders are used which have solubility parameters with low polar and hydrogen bonding contributions as materials of this type have low permanent dipoles. A preferred range for the solubility parameters ('Hansen parameter') of a binder for use in accordance with the present invention is provided in Table 1 below.

Table 1

The three dimensional solubility parameters listed above include: dispersive (5 _< j), polar (δ _ρ ) and hydrogen bonding (8 _h ) components (CM. Hansen, Ind. Eng. and Chem., Prod. Res. and Devi., 9, No3, p282., 1970). These parameters may be determined empirically or calculated from known molar group contributions as described in Handbook of Solubility Parameters and Other Cohesion Parameters ed. A.F.M. Barton, CRC Press, 1991. The solubility parameters of many known polymers are also listed in this publication. It is desirable that the permittivity of the binder has little dependence on frequency. This is typical of non-polar materials. Polymers and/or

copolymers can be chosen as the binder by the permittivity of their substituent groups. A list of suitable and preferred low polarity binders is given (without limiting to these examples) in Table 2:

Table 2

Binder typical low frequency permittivity (ε) polystyrene 2.5 poly(a-methylstyrene) 2.6 poly(a-vinylnaphtalene) 2.6 pol (vinyltoluene) 2.6 polyethylene 2.2-2.3 cis-polybutadiene 2.0 polypropylene 2.2 poly(4-methyl-1 -pentene) 2.1 poly (4-methylstyrene) 2.7 poly(chorotrifluoroethylene) 2.3-2.8 poly(2-methyl-1 ,3-butadiene) 2.4 poly(p-xylylene) 2.6 poly(a- -a'-a' tetrafluoro-p-xylylene) 2.4 poly[1 ,1-(2-methyl propane)bis(4-phenyl)carbonate] 2.3 poly(cyclohexyl methacrylate) 2.5 poly(chlorostyrene) 2.6 poly(2,6-dimethyl-1 ,4-phenylene ether) 2.6 polyisobutylene 2.2 poly(vinyl cyclohexane) 2.2 poly(vinylcinnamate) 2.9 poly(4-vinylbiphenyl) 2.7

Further preferred binders are poly(1 ,3-butadiene) and polyphenylene.

Especially preferred are formulations wherein the binder is selected from poly-a-methyl styrene, polystyrene and polytriarylamine or any copolymers of these, and the solvent is selected from xylene(s), toluene, tetralin and cyclohexanone.

Copolymers containing the repeat units of the above polymers are also suitable as binders. Copolymers offer the possibility of improving compatibility with the compounds of formula I, modifying the morphology and/or the glass transition temperature of the final layer composition. It will be appreciated that in the above table certain materials are insoluble in commonly used solvents for preparing the layer. In these cases analogues can be used as copolymers. Some examples of copolymers are given in Table 3 (without limiting to these examples). Both random or block copolymers can be used. It is also possible to add more polar monomer components as long as the overall composition remains low in polarity.

Table 3 permittivity (ε) poly(ethylene/tetrafluoroethylene) 2.6 poly(ethylene/chlorotrifluoroethylene) 2.3 fluorinated ethylene/propylene copolymer 2-2.5 polystyrene-co-a-methylstyrene 2.5-2.6 ethylene/ethyl acrylate copolymer 2.8 poly(styrene/10%butadiene) 2.6 poly(styrene/15%butadiene) 2.6 poly(styrene/2,4 dimethylstyrene) 2.5

Topas™ (all grades) 2.2-2.3

Other copolymers may include: branched or non-branched polystyrene- block-polybutadiene, polystyrene-block(polyethylene-ran-butylene)-block- polystyrene, polystyrene-block-polybutadiene-block-polystyrene, polystyrene-(ethylene-propylene)-diblock-copolymers (e.g. KRATON®- G1701E, Shell), poly(propylene-co-ethylene) and poly(styrene-co- methylmethacrylate) .

Preferred insulating binders for use in the organic semiconductor layer formulation according to the present invention are poly(cc-methylstyrene), polyvinylcinnamate, poly(4-vinylbiphenyl), poly(4-methylstyrene), and Topas™ 8007 (linear olefin, cyclo- olefin(norbornene) copolymer available from Ticona, Germany). Most preferred insulating binders are poly(a- methylstyrene), polyvinylcinnamate and poly(4-vinylbiphenyl).

The binder can also be selected from crosslinkable binders, like e.g.

acrylates, epoxies, vinylethers, thiolenes etc., preferably having a sufficiently low permittivity, very preferably of 3.3 or less. The binder can also be mesogenic or liquid crystalline.

As mentioned above the organic binder may itself be a semiconductor, in which case it will be referred to herein as a semiconducting binder. The semiconducting binder is still preferably a binder of low permittivity as herein defined. Semiconducting binders for use in the present invention preferably have a number average molecular weight (M _n ) of at least 1500- 2000, more preferably at least 3000, even more preferably at least 4000 and most preferably at least 5000. The semiconducting binder preferably has a charge carrier mobility, μ, of at least 10 ^"5 cm ² V ^" V ¹ , more preferably at least lO^cmW ¹ .

A preferred class of semiconducting binder is a polymer as disclosed in US 6,630,566, preferably an oligomer or polymer having repeat units of formula 1 :

wherein

¹ , Ar ²² and Ar ³³ which may be the same or different, denote,

independently if in different repeat units, an optionally substituted aromatic group that is mononuclear or

polynuclear, and is an integer > 1 , preferably > 6, preferably > 10, more preferably > 15 and most preferably > 20.

In the context of Ar ¹¹ , Ar ²² and Ar ³³ , a mononuclear aromatic group has only one aromatic ring, for example phenyl or phenylene. A polynuclear aromatic group has two or more aromatic rings which may be fused (for example napthyl or naphthylene), individually covalently linked (for example

biphenyl) and/or a combination of both fused and individually linked

aromatic rings. Preferably each Ar ¹¹ , Ar ²² and Ar ³³ is an aromatic group which is substantially conjugated over substantially the whole group.

Further preferred classes of semiconducting binders are those containing substantially conjugated repeat units. The semiconducting binder polymer may be a homopolymer or copolymer (including a block-copolymer) of the general formula 2:

A(c)B(d)... Z( ₂ ) 2 wherein A, B,...,Z each represent a monomer unit and (c), (d),...(z) each represent the mole fraction of the respective monomer unit in the polymer, that is each (c), (d),...(z) is a value from 0 to 1 and the total of (c) + (d) +...-» (z) = 1.

Examples of suitable and preferred monomer units A, B....Z include units of formula 1 above and of formulae 3 to 8 given below (wherein m is as defined in formula 1 :

wherein

R ^a and R ^b are independently of each other selected from H, F, CN, NO ₂ , - N(R ^c )(R ^d ) or optionally substituted alkyl, alkoxy, thioalkyl, acyl, aryl,

R ^c and R ^d are independently or each other selected from H, optionally

substituted alkyl, aryl, alkoxy or polyalkoxy or other substituents, and wherein the asterisk (·) is any terminal or end capping group including H, and the alkyl and aryl groups are optionally fluorinated;

wherein

Y is Se, Te, O, S or -N(R ^e ), preferably O, S or -N(R ^e )-,

R ^e is H, optionally substituted alkyl or aryl,

wherein R ^a , R ^b and Y are as defined in formulae 3 and 4;

wherein R ^a , R ^b and Y are as defined in formulae 3 and 4,

Z is -C(T ¹ )=C(T ² )-, -C≡C-, -N(R ^f )-, -N=N-, (R ^f )=N-, -N=C(R ^f )-,

T ¹ and T ² independently of each other denote H, CI, F, -CN or lower alkyl with 1 to 8 C atoms,

R ^f is H or optionally substituted alkyl or aryl;

wherein R ^a and R ^b are as defined in formula 3; wherein R ^a , R ^b , R ⁹ and R ^h independently of each other have one of the meanings of R ^a and R ^b in formula 3.

In the case of the polymeric formulae described herein, such as formulae 1 to 8, the polymers may be terminated by any terminal group, that is any end-capping or leaving group, including H.

In the case of a block-copolymer, each monomer A, B....Z may be a conjugated oligomer or polymer comprising a number, for example 2 to 50, of the units of formulae 3-8. The semiconducting binder preferably includes: arylamine, fluorene, thiophene, spiro bifluorene and/or optionally substituted aryl (for example phenylene) groups, more preferably arylamine, most preferably triarylamine groups. The aforementioned groups may be linked by further conjugating groups, for example vinylene.

In addition, it is preferred that the semiconducting binder comprises a polymer (either a homo-polymer or copolymer, including block-copolymer) containing one or more of the aforementioned arylamine, fluorene, thiophene and/or optionally substituted aryl groups. A preferred

semiconducting binder comprises a homo-polymer or copolymer (including block-copolymer) containing arylamine (preferably triarylamine) and/or fluorene units. Another preferred semiconducting binder comprises a homo- polymer or co-polymer (including block-copolymer) containing fluorene and/or thiophene units.

The semiconducting binder may also contain carbazole or stilbene repeat units. For example, polyvinylcarbazole, polystilbene or their copolymers may be used. The semiconducting binder may optionally contain DBBDT segments (for example repeat units as described for formula 1 above) to improve compatibility with the soluble compounds of formula. Very preferred semiconducting binders for use in the organic semiconductor formulation according to the present invention are poly(9-viny!carbazole) and PTAA1 , a polytriarylamine of the following formula

wherein m is as defined in formula 1.

For application of the semiconducting layer in p-channel FETs, it is desirable that the semiconducting binder should have a higher ionisation potential than the semiconducting compound of formula I, otherwise the binder may form hole traps. In n-channel materials the semiconducting binder should have lower electron affinity than the n-type semiconductor to avoid electron trapping.

The formulation according to the present invention may be prepared by a process which comprises:

(i) first mixing a compound of formula I and an organic binder or a

precursor thereof. Preferably the mixing comprises mixing the two components together in a solvent or solvent mixture,

(ii) applying the solvent(s) containing the compound of formula I and the organic binder to a substrate; and optionally evaporating the solvent(s) to form a solid organic semiconducting layer according to the present invention,

(iii) and optionally removing the solid layer from the substrate or the

substrate from the solid layer.

In step (i) the solvent may be a single solvent or the compound of formula I and the organic binder may each be dissolved in a separate solvent followed by mixing the two resultant solutions to mix the compounds.

The binder may be formed in situ by mixing or dissolving a compound of formula I in a precursor of a binder, for example a liquid monomer, oligomer or crosslinkable polymer, optionally in the presence of a solvent, and depositing the mixture or solution, for example by dipping, spraying, painting or printing it, on a substrate to form a liquid layer and then curing the liquid monomer, oligomer or crosslinkable polymer, for example by exposure to radiation, heat or electron beams, to produce a solid layer. If a preformed binder is used it may be dissolved together with the compound of formula I in a suitable solvent, and the solution deposited for example by dipping, spraying, painting or printing it on a substrate to form a liquid layer and then removing the solvent to leave a solid layer. It will be appreciated that solvents are chosen which are able to dissolve both the binder and the compound of formula I, and which upon evaporation from the solution blend give a coherent defect free layer.

Suitable solvents for the binder or the compound of formula I can be determined by preparing a contour diagram for the material as described in ASTM Method D 3132 at the concentration at which the mixture will be employed. The material is added to a wide variety of solvents as described in the ASTM method.

It will also be appreciated that in accordance with the present invention the formulation may also comprise two or more compounds of formula I and/or two or more binders or binder precursors, and that the process for preparing the formulation may be applied to such formulations.

Examples of suitable and preferred organic solvents include, without limitation, dichloromethane, trichloromethane, chlorobenzene, o- dichlorobenzene, tetrahydrofuran, anisole, morpholine, toluene, o-xylene, m-xylene, p-xylene, 1 ,4-dioxane, acetone, methylethylketone, 1 ,2- dichloroethane, 1 ,1 , 1-trichloroethane, 1 ,1 ,2,2-tetrachloroethane, ethyl acetate, n-butyl acetate, Ν,Ν-dimethylformamide, dimethylacetamide, dimethylsulfoxide, tetralin, decalin, indane and/or mixtures thereof. After the appropriate mixing and ageing, solutions are evaluated as one of the following categories: complete solution, borderline solution or insoluble. The contour line is drawn to outline the solubility parameter-hydrogen bonding limits dividing solubility and insolubility. 'Complete' solvents falling within the solubility area can be chosen from literature values such as published in "Crowley, J.D., Teague, G.S. Jr and Lowe, J.W. Jr., Journal of Paint Technology, 1966, 38( 496), 296 ". Solvent blends may also be used and can be identified as described in "Solvents, W.H.Ellis, Federation of Societies for Coatings Technology, p9-10, 1986". Such a procedure may lead to a blend of 'ηοη' solvents that will dissolve both the binder and the compound of formula I, although it is desirable to have at least one true solvent in a blend.

Especially preferred solvents for use in the formulation according to the present invention, with insulating or semiconducting binders and mixtures thereof, are xylene(s), toluene, tetralin and o-dichlorobenzene.

The proportions of binder to the compound of formula I in the formulation or layer according to the present invention are typically 20:1 to 1 :20 by weight, preferably 10:1 to 1 :10 more preferably 5:1 to 1 :5, still more preferably 3:1 to 1 :3 further preferably 2:1 to 1 :2 and especially 1 :1. Surprisingly and beneficially, dilution of the compound of formula I in the binder has been found to have little or no detrimental effect on the charge mobility, in contrast to what would have been expected from the prior art.

In accordance with the present invention it has further been found that the level of the solids content in the organic semiconducting layer formulation is also a factor in achieving improved mobility values for electronic devices such as OFETs. The solids content of the formulation is commonly expressed as follows:

Solids content (%) = ^{a + b} x 100

a + b + c

wherein a = mass of compound of formula I, b = mass of binder and c = mass of solvent. The solids content of the formulation is preferably 0.1 to 10% by weight, more preferably 0.5 to 5% by weight.

Surprisingly and beneficially, dilution of the compound of formula I in the binder has been found to have little or no effect on the charge mobility, in contrast to what would have been expected from the prior art.

The compounds according to the present invention can also be used in mixtures or blends, for example together with other compounds having charge-transport, semiconducting, electrically conducting, photoconducting and/or light emitting semiconducting properties. Thus, another aspect of the invention relates to a mixture or blend comprising one or more compounds of formula I and one or more further compounds having one or more of the above-mentioned properties. These mixtures can be prepared by

conventional methods that are described in prior art and known to the skilled person. Typically the compounds are mixed with each other or dissolved in suitable solvents and the solutions combined.

The formulations according to the present invention can additionally comprise one or more further components like for example surface-active compounds, lubricating agents, wetting agents, dispersing agents, hydrophobing agents, adhesive agents, flow improvers, defoaming agents, deaerators, diluents which may be reactive or non-reactive, auxiliaries, colourants, dyes or pigments, sensitizers, stabilizers, nanoparticles or "inhibitors.

It is desirable to generate small structures in modern microelectronics to reduce cost (more devices/unit area), and power consumption. Patterning of the layer of the invention may be carried out by photolithography or electron beam lithography.

Liquid coating of organic electronic devices such as field effect transistors is more desirable than vacuum deposition techniques. The formulations of the present invention enable the use of a number of liquid coating techniques. The organic semiconductor layer may be incorporated into the final device structure by, for example and without limitation, dip coating, spin coating, ink jet printing, letter-press printing, screen printing, doctor blade coating, roller printing, reverse-roller printing, offset lithography printing, flexographic printing, web printing, spray coating, brush coating or pad printing. The present invention is particularly suitable for use in spin coating the organic semiconductor layer into the final device structure.

Selected formulations of the present invention may be applied to

prefabricated device substrates by ink jet printing or microdispensing.

Preferably industrial piezoelectric print heads such as but not limited to those supplied by Aprion, Hitachi-Koki, InkJet Technology, On Target Technology, Picojet, Spectra, Trident, Xaar may be used to apply the organic semiconductor layer to a substrate. Additionally semi-industrial heads such as those manufactured by Brother, Epson, Konica, Seiko Instruments Toshiba TEC or single nozzle microdispensers such as those produced by Microdrop and Microfab may be used.

In order to be applied by ink jet printing or microdispensing, the mixture of the compound of formula I and the binder should be first dissolved in a suitable solvent. Solvents must fulfil the requirements stated above and must not have any detrimental effect on the chosen print head.

Additionally, solvents should have boiling points >100°C, preferably >140°C and more preferably >150°C in order to prevent operability problems caused by the solution drying out inside the print head. Suitable solvents include substituted and non-substituted xylene derivatives, di-C _-2 -alkyl formamide, substituted and non-substituted anisoles and other phenol-ether derivatives, substituted heterocycles such as substituted pyridines, pyrazines,

pyrimidines, pyrrolidinones, substituted and non-substituted A/,/V-di-C _1-2 - alkylanilines and other fluorinated or chlorinated aromatics.

A preferred solvent for depositing a formulation according to the present invention by ink jet printing comprises a benzene derivative which has a benzene ring substituted by one or more substituents wherein the total number of carbon atoms among the one or more substituents is at least three. For example, the benzene derivative may be substituted with a propyl group or three methyl groups, in either case there being at least three carbon atoms in total. Such a solvent enables an ink jet fluid to be formed comprising the solvent with the binder and the compound of formula I which reduces or prevents clogging of the jets and separation of the components during spraying. The solvent(s) may include those selected from the following list of examples: dodecylbenzene, l-methyl-4-tert-butylbenzene,

terpineol.limonene, isodurene, terpinolene, cymene, diethylbenzene. The solvent may be a solvent mixture, that is a combination of two or more solvents, each solvent preferably having a boiling point >100°C, more preferably >140°C. Such solvent(s) also enhance film formation in the layer deposited and reduce defects in the layer.

The ink jet fluid (that is mixture of solvent, binder and semiconducting compound) preferably has a viscosity at 20°C of 1 to 100 mPa s, more preferably 1 to 50 mPa s and most preferably 1 to 30 mPa s.

The use of the binder in the present invention allows tuning the viscosity of the coating solution, to meet the requirements of particular print heads.

The semiconducting layer of the present invention is typically at most 1 micron (=1μ ι) thick, although it may be thicker if required. The exact thickness of the layer will depend, for example, upon the requirements of the electronic device in which the layer is used. For use in an OFET or OLED, the layer thickness may typically be 500 nm or less.

In the semiconducting layer of the present invention there may be used two or more different compounds of formula I. Additionally or alternatively, in the semiconducting layer there may be used two or more organic binders of the present invention.

As mentioned above, the invention further provides a process for preparing the organic semiconducting layer which comprises (i) depositing on a substrate a liquid layer of a formulation which comprises one or more compounds of formula I, one or more organic binders or precursors thereof and optionally one or more solvents, and (ii) forming from the liquid layer a solid layer which is the organic semiconducting layer. ln the process, the solid layer may be formed by evaporation of the solvent and/or by reacting the binder resin precursor (if present) to form the binder resin in situ. The substrate may include any underlying device layer, electrode or separate substrate such as silicon wafer or polymer substrate for example.

In a particular embodiment of the present invention, the binder may be alignable, for example capable of forming a liquid crystalline phase. In that case the binder may assist alignment of the compound of formula I, for example such that their aromatic core is preferentially aligned along the direction of charge transport. Suitable processes for aligning the binder include those processes used to align polymeric organic semiconductors and are described in prior art, for example in US 2004/0248338 A1.

The formulation according to the present invention can additionally comprise one or more further components like for example surface-active compounds, lubricating agents, wetting agents, dispersing agents, hydrophobing agents, adhesive agents, flow improvers, defoaming agents, deaerators, diluents, reactive or non-reactive diluents, auxiliaries,

colourants, dyes or pigments, furthermore, especially in case crosslinkable binders are used, catalysts, sensitizers, stabilizers, inhibitors, chain-transfer agents or co-reacting monomers.

The present invention also provides the use of the semiconducting compound, formulation or layer in an electronic device. The formulation may be used as a high mobility semiconducting material in various devices and apparatus. The formulation may be used, for example, in the form of a semiconducting layer or film. Accordingly, in another aspect, the present invention provides a semiconducting layer for use in an electronic device, the layer comprising the formulation according to the invention. The layer or film may be less than about 30 microns. For various electronic device

applications, the thickness may be less than about 1 micron thick. The layer may be deposited, for example on a part of an electronic device, by any of the aforementioned solution coating or printing techniques.

The compounds and formulations according to the present invention are useful as charge transport, semiconducting, electrically conducting, photoconducting or light mitting materials in optical, electrooptical, electronic, electroluminescent or photoluminescent components or devices. Especially preferred devices are OFETs, TFTs, !Cs, logic circuits, capacitors, RFID tags, OLEDs, OLETs, OPEDs, OPVs, OPDs, solar cells, laser diodes, photoconductors, photodetectors, electrophotographic devices, electrophotographic recording devices, organic memory devices, sensor devices, charge injection layers, Schottky diodes, planarising layers, antistatic films, conducting substrates and conducting patterns. In these devices, the compounds of the present invention are typically applied as thin layers or films.

For example, the compound or formulation may be used as a layer or film, in a field effect transistor (FET) for example as the semiconducting channel, organic light emitting diode (OLED) for example as a hole or electron injection or transport layer or electroluminescent layer, photodetector, chemical detector, photovoltaic cell (PVs), capacitor sensor, logic circuit, display, memory device and the like. The compound or formulation may also be used in electrophotographic (EP) apparatus.

The compound or formulation is preferably solution coated to form a layer or film in the aforementioned devices or apparatus to provide advantages in cost and versatility of manufacture. The improved charge carrier mobility of the compound or formulation of the present invention enables such devices or apparatus to operate faster and/or more efficiently.

Especially preferred electronic device are OFETs, OLEDs, OPV devices and OPD devices, in particular bulk heterojunction (BHJ) OPV devices. In an OFET, for example, the active semiconductor channel between the drain and source may comprise the layer of the invention. As another example, in an OLED device, the charge (hole or electron) injection or transport layer may comprise the layer of the invention.

For use in OPV or OPD devices the compounds according to the present invention are preferably used in a formulation that comprises or contains, more preferably consists essentially of, very preferably exclusively of, a p- type (electron donor) semiconductor and an n-type (electron acceptor) semiconductor. The p-type semiconductor is constituted by a compound according to the present invention. The n-type semiconductor can be an inorganic material such as zinc oxide (ZnO _x ), zinc tin oxide (ZTO), titan oxide (TiO _x ), molybdenum oxide (MoO _x ), nickel oxide (NiO _x ), or cadmium selenide (CdSe), or an organic material such as graphene or a fulierene or substituted fulierene, for example an indene-C ₆ o-fullerene bisaduct like ICBA, or a (6,6)- phenyl-butyric acid methyl ester derivatized methano Ceo fulierene, also known as "PCBM-C ₆ o" or "C ₆ oPCBM", as disclosed for example in G. Yu, J. Gao, J.C. Hummelen, F. WudI, A.J. Heeger, Science 1995, Vol. 270, p. 1789 ff and having the structure shown below, or structural analogous compounds with e.g. a Cei fulierene group, a C ₇₀ fulierene group, or a C ₇ fulierene group, or an organic polymer (see for example Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16, 4533).

C ₆₀ PCBM

Preferably the compound according to the present invention is blended with an n-type semiconductor such as a fulierene or substituted fulierene, like for example PCBM-C ₆₀ , PCBM-C ₇₀ , PCBM-C ₆₁ , PCBM-C71 , bis-PCBM-C ₆ i, bis- PCBM-C ₇₁ , ICBA (1 ',1 ",4',4"- tetrahydro-di[1 ,4]methanonaphthaleno

[1 ,2:2 ^, ,3';56,60:2",3"][5 ₎ 6]fullerene-C60-lh), graphene, or a metal oxide, like for example, ZnO _X) TiO _x , ZTO, MoO _x , NiO _x , to form the active layer in an OPV or OPD device. The device preferably further comprises a first transparent or semi-transparent electrode on a transparent or semi- transparent substrate on one side of the active layer, and a second metallic or semi-transparent electrode on the other side of the active layer. Further preferably the OPV or OPD device comprises, between the active layer and the first or second electrode, one or more additional buffer layers acting as hole transporting layer and/or electron blocking layer, which comprise a material such as metal oxide, like for example, ZTO, MoO _x , ΝιΌχ, a conjugated polymer electrolyte, like for example PEDOT:PSS, a conjugated polymer, like for example polytriarylamine (PTAA), an organic compound, like for example N.N'-diphenyl-N.N'-bisil -naphthy il .V- biphenyl)-4,4'diamine (NPB), N.N'-diphenyl-N.N'-iS-methylpheny -l .l '- biphenyl-4,4'-diamine (TPD), or alternatively as hole blocking layer and/or electron transporting layer, which comprise a material such as metal oxide, like for example, ZnO _X) TiO _x , a salt, like for example LiF, NaF, CsF, a conjugated polymer electrolyte, like for example poly[3-(6- trimethylammoniumhexyl)thiophene], poly(9,9-bis(2-ethylhexyl)- fluorene]-jb-poly[3-(6-trimethylammoniumhexyl)thiophene], or poly [(9,9- bis(3 ^' -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9 - dioctylfluorene)] or an organic compound, like for example tris(8- quinolinolato)-aluminium(lll) (Alq3), 4,7-diphenyl-1 , 10-phenanthroline.

In a mixture of a compound according to the present invention with a fullerene or modified fullerene, the ratio compound.fullerene is preferably from 5: 1 to 1 :5 by weight, more preferably from 1 :1 to 1 :3 by weight, most preferably 1 : 1 to 1 :2 by weight. A polymeric binder may also be included, from 5 to 95% by weight. Examples of binder include polystyrene (PS), polypropylene (PP) and polymethylmethacrylate (PMMA).

To produce thin layers in BHJ OPV devices the compounds or formulations of the present invention may be deposited by any suitable method. Liquid coating of devices is more desirable than vacuum deposition techniques. Solution deposition methods are especially preferred. The formulations of the present invention enable the use of a number of liquid coating techniques. Preferred deposition techniques include, without limitation, dip coating, spin coating, ink jet printing, nozzle printing, letter-press printing, screen printing, gravure printing, doctor blade coating, roller printing, reverse-roller printing, offset lithography printing, dry offset lithography printing, flexographic printing, web printing, spray coating, dip coating, curtain coating, brush coating, slot dye coating or pad printing. For the fabrication of OPV devices and modules area printing method compatible with flexible substrates are preferred, for example slot dye coating, spray coating and the like.

Suitable solutions or formulations containing the mixture of a compound according to the present invention with a C ₆ o or C ₇₀ fullerene or modified fullerene like PCBM must be prepared. In the preparation of formulations, suitable solvent must be selected to ensure full dissolution of both component, p-type and n-type and take into account the boundary conditions (for example rheological properties) introduced by the chosen printing method.

Organic solvent are generally used for this purpose. Typical solvents can be aromatic solvents, halogenated solvents or chlorinated solvents, including chlorinated aromatic solvents. Examples include, but are not limited to chlorobenzene, 1 ,2-dichlorobenzene, chloroform, 1 ,2-dichloroethane, dichloromethane, carbon tetrachloride, toluene, cyclohexanone,

ethylacetate, tetrahydrofuran, anisole, morpholine, o-xylene, m-xylene, p- xylene, 1 ,4-dioxane, acetone, methylethylketone, 1 ,2-dichloroethane, 1 ,1 , 1- trichloroethane, 1 ,1 ,2,2-tetrachloroethane, ethyl acetate, n-butyl acetate, dimethylformamide, dimethylacetamide, dimethylsulfoxide, tetraline, decaline, indane, methyl benzoate, ethyl benzoate, mesitylene and combinations thereof.

The OPV device can for example be of any type known from the literature (see e.g. Waldauf ef a/., Appl. Phys. Lett., 2006, 89, 2335 7).

A first preferred OPV device according to the invention comprises the following layers (in the sequence from bottom to top):

- optionally a substrate,

- a high work function electrode, preferably comprising a metal oxide, like for example ITO, serving as anode,

- an optional conducting polymer layer or hole transport layer, preferably comprising an organic poymer or polymer blend, for example of

PEDOT:PSS (poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate), or TBD (N,N'-dyphenyl-N-N'-bis(3-methylphenyl)-1 ,1'biphenyl-4,4'- diamine) or NBD (N,N'-dyphenyl-N-N'-bis(1-napthylphenyl)-1 ,1 'biphenyl-

4,4 -diamine), - a layer, also referred to as "active layer", comprising a p-type and an n- type organic semiconductor, which can exist for example as a p-type/n- type bilayer or as distinct p-type and n-type layers, or as blend or p-type and n-type semiconductor, forming a BHJ,

- optionally a layer having electron transport properties, for example

comprising LiF,

- a low work function electrode, preferably comprising a metal like for example aluminum, serving as cathode,

wherein at least one of the electrodes, preferably the anode, is

transparent to visible light, and

wherein the p-type semiconductor is a compound according to the present invention.

A second preferred OPV device according to the invention is an inverted OPV device and comprises the following layers (in the sequence from bottom to top):

- optionally a substrate,

- a high work function metal or metal oxide electrode, comprising for example ITO, serving as cathode,

- a layer having hole blocking properties, preferably comprising a metal oxide like TiO _x or Zn _x ,

- an active layer comprising a p-type and an n-type organic semiconductor, situated between the electrodes, which can exist for example as a p- type/n-type bilayer or as distinct p-type and n-type layers, or as blend or p-type and n-type semiconductor, forming a BHJ,

- an optional conducting polymer layer or hole transport layer, preferably comprising an organic poymer or polymer blend, for example of

PEDOTPSS or TBD or NBD,

- an electrode comprising a high work function metal like for example silver, serving as anode,

wherein at least one of the electrodes, preferably the cathode, is transparent to visible light, and

wherein the p-type semiconductor is a compound according to the present invention. !n the OPV devices of the present invention the p-type and n-type semiconductor materials are preferably selected from the materials, like the compound/fullerene systems, as described above.

When the active layer is deposited on the substrate, it forms a BHJ that phase separates at nanoscale level. For discussion on nanoscale phase separation see Dennler et al, Proceedings of the IEEE, 2005, 93 (8), 1429 or Hoppe et al, Adv. Func. Mater, 2004, 14(10), 1005. An optional annealing step may be then necessary to optimize blend morpohology and consequently OPV device performance.

Another method to optimize device performance is to prepare formulations for the fabrication of OPV(BHJ) devices that may include high boiling point additives to promote phase separation in the right way. 1 ,8-Octanedithiol, 1 ,8-diiodooctane, nitrobenzene, chloronaphthalene, and other additives have been used to obtain high-efficiency solar cells. Examples are disclosed in J. Peet, et al, Nat. Mater., 2007, 6, 497 or Frechet et al. J. Am. Chem. Soc, 2010, 132, 7595-7597.

The compound, formulation and layer of the present invention are also suitable for use in an OFET as the semiconducting channel. Accordingly, the invention also provides an OFET comprising a gate electrode, an insulating (or gate insulator) layer, a source electrode, a drain electrode and an organic semiconducting channel connecting the source and drain electrodes, wherein the organic semiconducting channel comprises a compound of formula I, formulation or organic semiconducting layer according to the present invention. Other features of the OFET are well known to those skilled in the art.

OFETs where an OSC material is arranged as a thin film between a gate dielectric and a drain and a source electrode, are generally known, and are described for example in US 5,892,244, US 5,998,804, US 6,723,394 and in the references cited in the background section. Due to the advantages, like low cost production using the solubility properties of the compounds according to the invention and thus the processibility of large surfaces, preferred applications of these FETs are such as integrated circuitry, TFT displays and security applications.

The gate, source and drain electrodes and the insulating and

semiconducting layer in the OFET device may be arranged in any sequence, provided that the source and drain electrode are separated from the gate electrode by the insulating layer, the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconducting layer.

An OFET device according to the present invention preferably comprises:

- a source electrode,

- a drain electrode,

- a gate electrode,

- a semiconducting layer,

- one or more gate insulator layers,

- optionally a substrate. wherein the semiconductor layer preferably comprises a compound of formula I or a formulation according to the present invention.

The OFET device can be a top gate device or a bottom gate device.

Suitable structures and manufacturing methods of an OFET device are known to the skilled in the art and are described in the literature, for example in US 2007/0102696 A1.

The gate insulator layer preferably comprises a fluoropolymer, like e.g. the commercially available Cytop 809M® or Cytop 107M® (from Asahi Glass). Preferably the gate insulator layer is deposited, e.g. by spin-coating, doctor blading, wire bar coating, spray or dip coating or other known methods, from a formulation comprising an insulator material and one or more solvents with one or more fluoro atoms (fluorosolvents), preferably a perfluorosolvent. A suitable perfluorosolvent is e.g. FC75® (available from Acros, catalogue number 12380). Other suitable fluoropolymers and fluorosolvents are known in prior art, like for example the perfluoropolymers Teflon AF® 1600 or 2400 (from DuPont) or Fluoropel® (from Cytonix) or the perfluorosolvent FC 43® (Acros, No. 12377). Especially preferred are organic dielectric materials having a low permittivity (or dielectric contant) from 1.0 to 5.0, very preferably from 1.8 to 4.0 ("low k materials"), as disclosed for example in US 2007/0102696 A1 or US 7,095,044.

In security applications, OFETs and other devices with semiconducting materials according to the present invention, like transistors or diodes, can be used for RFID tags or security markings to authenticate and prevent counterfeiting of documents of value like banknotes, credit cards or ID cards, national ID documents, licenses or any product with monetry value, like stamps, tickets, shares, cheques etc.

Alternatively, the materials according to the invention can be used in OLEDs, e.g. as the active display material in a flat panel display

applications, or as backlight of a flat panel display like e.g. a liquid crystal display. Common OLEDs are realized using multilayer structures. An emission layer is generally sandwiched between one or more electron- transport and/or hole-transport layers. By applying an electric voltage electrons and holes as charge carriers move towards the emission layer where their recombination leads to the excitation and hence luminescence of the lumophor units contained in the emission layer. The inventive compounds, materials and films may be employed in one or more of the charge transport layers and/or in the emission layer, corresponding to their electrical and/or optical properties. Furthermore their use within the emission layer is especially advantageous, if the compounds, materials and films according to the invention show electroluminescent properties themselves or comprise electroluminescent groups or compounds. The selection, characterization as well as the processing of suitable monomeric, oligomeric and polymeric compounds or materials for the use in OLEDs is generally known by a person skilled in the art, see, e.g., Muller, Synth. Metals, 2000, 1 1 1-1 2, 31 , Alcala, J. Appl. Phys., 2000, 88, 7124 and the literature cited therein.

According to another use, the materials according to this invention, especially those showing photoluminescent properties, may be employed as materials of light sources, e.g. in display devices, as described in EP 0 889 350 A1 or by C. Weder et al., Science, 1998, 279, 835. A further aspect of the invention relates to both the oxidised and reduced form of the compounds according to this invention. Either loss or gain of electrons results in formation of a highly delocalised ionic form, which is of high conductivity. This can occur on exposure to common dopants. Suitable dopants and methods of doping are known to those skilled in the art, e.g. from EP 0 528 662, US 5,198,153 or WO 96/21659.

The doping process typically implies treatment of the semiconductor material with an oxidating or reducing agent in a redox reaction to form delocalised ionic centres in the material, with the corresponding counterions derived from the applied dopants. Suitable doping methods comprise for example exposure to a doping vapor in the atmospheric pressure or at a reduced pressure, electrochemical doping in a solution containing a dopant, bringing a dopant into contact with the semiconductor material to be thermally diffused, and ion-implantantion of the dopant into the

semiconductor material.

When electrons are used as carriers, suitable dopants are for example halogens (e.g., I ₂ , Cl ₂ , Br ₂ , ICI, ICI ₃ , IBr and IF), Lewis acids (e.g., PF ₅ , AsF ₅ , SbF ₅ , BF ₃ , BCI ₃ , SbCI ₅ , BBr ₃ and SO ₃ ), protonic acids (e.g., HF, HCI, HNO ₃ , H ₂ SO ₄ , HCIO4, FSO ₃ H and CISO ₃ H), organic acids, or amino acids, transition metal compounds (e.g., FeCI _3l FeOCI, Fe(CIO ₄ ) ₃ , Fe(4- CH ₃ C ₆ H ₄ SO ₃ ) ₃ , TiCI ₄ , ZrCI ₄ , HfCI ₄ , NbF ₅ , NbCI ₅ , TaCI ₆ , MoF ₅₎ M0CI5, WF ₅ , WCI ₆ , UF ₆ and LnCI ₃ (wherein Ln is a lanthanoid), anions (e.g., CI ^" , Br ^" , I ^" , l ₃ ^" , HSO ₄ ^" , SO ₄ ^2" , NO ₃ ^" , CIO ₄ ^" , BF ₄ ^" , PF ₆ ^" , AsF ₆ ^" , SbF ₆ ^" , FeCI ₄ ^" , Fe(CN) ₆ ^3" , and anions of various sulfonic acids, such as aryl-SO ₃ ^" ). When holes are used as carriers, examples of dopants are cations (e.g., H ⁺ , Li ⁺ , Na ⁺ , K ⁺ , Rb ⁺ and Cs ⁺ ), alkali metals (e.g., Li, Na, K, Rb, and Cs), alkaline-earth metals (e.g., Ca, Sr, and Ba), O ₂₎ XeOF ₄ , (NO ₂ ⁺ ) (SbF ₆ ), (NO ₂ ⁺ ) (SbCI ₆ ), (NO ₂ ⁺ ) (BF ₄ ), AgCI0 ₄ , H ₂ lrCI ₆ , La(NO ₃ ) ₃ 6H ₂ O, FSO ₂ OOSO ₂ F, Eu, acetylcholine, R ₄ N ⁺ , (R is an alkyl group), P P ⁺ (R is an alkyl group), ReAs ⁺ (R is an alkyl group), and R ₃ S ⁺ (R is an alkyl group).

The conducting form of the compounds of the present invention can be used as an organic "metal" in applications including, but not limited to, charge injection layers and ITO planarising layers in OLED applications, films for flat panel displays and touch screens, antistatic films, printed conductive substrates, patterns or tracts in electronic applications such as printed circuit boards and condensers.

The compounds and formulations according to the present invention may also be suitable for use in organic plasmon-emitting diodes (OPEDs), as described for example in Koller et al., Nat. Photonics, 2008, 2, 684.

According to another use, the materials according to the present invention can be used alone or together with other materials in or as alignment layers in LCD or OLED devices, as described for example in US 2003/0021913. The use of charge transport compounds according to the present invention can increase the electrical conductivity of the alignment layer. When used in an LCD, this increased electrical conductivity can reduce adverse residual dc effects in the switchable LCD cell and suppress image sticking or, for example in ferroelectric LCDs, reduce the residual charge produced by the switching of the spontaneous polarisation charge of the ferroelectric LCs. When used in an OLED device comprising a light emitting material provided onto the alignment layer, this increased electrical conductivity can enhance the electroluminescence of the light emitting material. The compounds or materials according to the present invention having mesogenic or liquid crystalline properties can form oriented anisotropic films as described above, which are especially useful as alignment layers to induce or enhance alignment in a liquid crystal medium provided onto said anisotropic film. The materials according to the present invention may also be combined with photoisomerisable compounds and/or chromophores for use in or as photoalignment layers, as described in US 2003/0021913.

According to another use, the materials according to the present invention, especially their water-soluble derivatives (for example with polar or ionic side groups) or ionically doped forms, can be employed as chemical sensors or materials for detecting and discriminating DNA sequences. Such uses are described for example in L. Chen, D. W. McBranch, H. Wang, R. Helgeson, F. Wudl and D. G. Whitten, Proc. Natl. Acad. Sci. U.S.A. 1999, 96, 12287; D. Wang, X. Gong, P. S. Heeger, F. Rininsland, G. C. Bazan and A. J. Heeger, Proc. Natl. Acad. Sci. U.S.A. 2002, 99, 49; N. DiCesare, M. R. Pinot, K. S. Schanze and J. R. Lakowicz, Langmuir 2002, 18, 7785; D. T. McQuade, A. E. Pullen, T. M. Swager, Chem. Rev. 2000, 100, 2537.

Unless the context clearly indicates otherwise, as used herein plural forms of the terms herein are to be construed as including the singular form and vice versa.

Throughout the description and claims of this specification, the words "comprise" and "contain" and variations of the words, for example

"comprising" and "comprises", mean "including but not limited to", and are not intended to (and do not) exclude other components.

It will be appreciated that variations to the foregoing embodiments of the invention can be made while still falling within the scope of the invention. Each feature disclosed in this specification, unless stated otherwise, may be replaced by alternative features serving the same, equivalent or similar purpose. Thus, unless stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features.

All of the features disclosed in this specification may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. In particular, the preferred features of the invention are applicable to all aspects of the invention and may be used in any combination. Likewise, features described in non-essential combinations may be used separately (not in combination).

It will be appreciated that many of the features described above, particularly of the preferred embodiments, are inventive in their own right and not just as part of an embodiment of the present invention. Independent protection may be sought for these features in addition to or alternative to any invention presently claimed.

The invention will now be described in more detail by reference to the following examples, which are illustrative only and do not limit the scope of the invention. Unless stated otherwise, above and below percentages are percent by weight and temperatures are given in degrees Celsius. Example 1

3.6-Bis-(3-octyl-thiophen-2-yl)-thienor3.2-b1thiophene-2. 5-dione (1.1)

The 3,6-diiodo-thieno[3,2-b]thiophene-2,5-dione (1.000 g; 2.370 mmol), tributyl-(3-octyl-thiophen-2-yl)-stannane (Bras, Jerome; Guillerez, Stephane; Pepin-Donat, Brigitte. Chem. Mater. 2000, 12, 2372-2384) (2.977 g; 5.213 mmol), PdCI ₂ (PPh ₃ ) ₂ (166 mg; 0.237 mmol), copper Iodide (45 mg; 0.237 mmol) and toluene (100 cm ³ ) is added in a 250 cm ³ flask. The resulting mixture is carefully degassed for 30 minutes, and then heated at 90 °C for 16h under nitrogen protection. Silica is added and the solvent removed in vacuo. The crude product is purified by column chromatography (eluent: petroleum ether 40-60:DCM; 70:30 ratio) to recover the pure product as a red powder (612 mg, Yield : 46 %). NMR (1H, 300 MHz, CDCI3) : δ 7.47 (d, J = 5.1 Hz, 2H); 7.02 (d, J = 5.1 Hz, 2H); 2.57 (t, J = 7.8 Hz, 4H); 1.61 (m, 4H); 1.26 (m, 20H); 0.86 (t, J = 6.7 Hz, 6H). NMR ( ¹³ C, 75 MHz, CDCI ₃ ) : δ 186.92; 154.77; 145.82; 129.91 ; 192.26; 129.05; 123.79; 32.01 ; 30.70;

30.06; 29.61 ; 29.52; 29.37; 22.81 ; 14.27.

3.6-Bis-(5-bromo-3-octyl-thiophen-2-vh-thienor3,2-blthiop hene-2.5-dione

02)

The 3,6-bis-(3-octyl-thiophen-2-yl)-thieno[3,2-b]thiophene-2,5-d ione (1.1) (418 mg; 0.748 mmol) is dissolved in anhydrous DMF (7.5 cm ³ ) at 60 °C before adding under the protection of inert atmosphere and light, the 1- Bromo-pyrrolidine-2,5-dione (NBS) (253 mg; 1.421 mmol) slowly in one portion. After 24 hours, the reaction mixture is poured in a 5 % aqueous solution of sodium thiosulfate. The aqueous layer is extracted with DCM (3 x 100 cm ³ ) and the combined organic fraction dried over magnesium sulfate and removed in vacuo. The crude product is purified several times by column chromatography (eluent: petroleum ether 40-60:DCM; 70:30 ratio) to recover the pure product as a red powder (205 mg, Yield : 38 %). NMR (Ή, 300 MHz, CDCI ₃ ) : δ 6.99 (s, 2H); 2.50 (t, J = 7.8 Hz, 4H); 1.57 (m, 6H); 1.21 (m, 18H); 0.86 (t, J = 6.7 Hz, 6H). NMR ( ³ C, 75 MHz, CDCI ₃ ) : δ 186.29; 154.78; 146.57; 132.64; 128.15; 125.13; 116.75; 31.98; 30.52;

30.25; 29.52; 29.47; 29.33; 22.81 ; 14.27.