Title:
SOI SUBSTRATE, PHYSICAL VOLUME SENSOR, SOI SUBSTRATE PRODUCTION METHOD, AND PHYSICAL VOLUME SENSOR PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2014/181518
Kind Code:
A1
Abstract:
A capacitance type physical volume sensor comprising first substrates (13, 14) and second substrates (11, 51) bonded to the first substrates via insulating films (12, 52). The second substrates have first and second groove sections (18a, 18b), respectively, at sections facing end sections on the opposite side to a movable section (20) side of first and second support sections (32, 42) formed on the first substrate. Some of the end section in the first support section (32) protrudes above the first groove section (18a) and some of the end section in the second support section (42) protrudes above the second groove section (18b).
Inventors:
YOSHIOKA TETSUO (JP)
ASAI SHINYA (JP)
NISHIDA JYUNYA (JP)
ASAI SHINYA (JP)
NISHIDA JYUNYA (JP)
Application Number:
PCT/JP2014/002298
Publication Date:
November 13, 2014
Filing Date:
April 24, 2014
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
G01P15/125; B81B3/00; B81C3/00; G01P15/08; H01L29/84
Foreign References:
| JP2011017693A | 2011-01-27 | |||
| JP2001041973A | 2001-02-16 | |||
| JP2012117972A | 2012-06-21 | |||
| JP2010127763A | 2010-06-10 | |||
| JP2000205862A | 2000-07-28 | |||
| JPH10189500A | 1998-07-21 | |||
| JP2013229356A | 2013-11-07 |
Attorney, Agent or Firm:
KIN, Junhi (JP)
Gold Junki (JP)
Gold Junki (JP)
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