Title:
SOI WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2010/067516
Kind Code:
A1
Abstract:
Provided is a method for manufacturing an SOI wafer having an embedded oxide film of a predetermined thickness by executing a thermal process to reduce the thickness of the embedded oxide film, on an SOI wafer material having an SOI layer formed on the embedded oxide film. The thickness of the SOI layer of the SOI wafer material to be subjected to the thermal process for reducing the thickness of the embedded oxide film is calculated in accordance with the ratio of the thickness of the embedded oxide film to be reduced by the thermal process with respect to an allowance of the change amount of the in-plane range of the embedded oxide film caused by the thermal process. The SOI wafer material having the calculated SOI layer thickness obtained by reducing the bond wafer film thickness is subjected to the thermal process to reduce the embedded oxide film thickness. This can suppress degradation of the in-plane distribution of the embedded oxide film caused by the uneven thermal process temperature when executing the thermal process for reducing the thickness of the embedded oxide film and realize an SOI wafer having an excellent uniformity of the embedded oxide film thickness.
Inventors:
ISHIZUKA, Tohru (Shin-Etsu Handotai Co. Ltd., 507, Aza Matsubara, Nakanoya, Annaka-sh, Gunma 25, 〒3790125, JP)
石塚徹 (〒25 群馬県安中市中野谷字松原５０７信越半導体株式会社 横野平工場内 Gunma, 〒3790125, JP)
KOBAYASHI, Norihiro (Shin-Etsu Handotai Co. Ltd., 507, Aza Matsubara, Nakanoya, Annaka-sh, Gunma 25, 〒3790125, JP)
小林徳弘 (〒25 群馬県安中市中野谷字松原５０７信越半導体株式会社 横野平工場内 Gunma, 〒3790125, JP)
石塚徹 (〒25 群馬県安中市中野谷字松原５０７信越半導体株式会社 横野平工場内 Gunma, 〒3790125, JP)
KOBAYASHI, Norihiro (Shin-Etsu Handotai Co. Ltd., 507, Aza Matsubara, Nakanoya, Annaka-sh, Gunma 25, 〒3790125, JP)
小林徳弘 (〒25 群馬県安中市中野谷字松原５０７信越半導体株式会社 横野平工場内 Gunma, 〒3790125, JP)
Application Number:
JP2009/006007
Publication Date:
June 17, 2010
Filing Date:
November 11, 2009
Export Citation:
Assignee:
Shin-Etsu Handotai Co.,Ltd. (6-2 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
ISHIZUKA, Tohru (Shin-Etsu Handotai Co. Ltd., 507, Aza Matsubara, Nakanoya, Annaka-sh, Gunma 25, 〒3790125, JP)
石塚徹 (〒25 群馬県安中市中野谷字松原５０７信越半導体株式会社 横野平工場内 Gunma, 〒3790125, JP)
KOBAYASHI, Norihiro (Shin-Etsu Handotai Co. Ltd., 507, Aza Matsubara, Nakanoya, Annaka-sh, Gunma 25, 〒3790125, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
ISHIZUKA, Tohru (Shin-Etsu Handotai Co. Ltd., 507, Aza Matsubara, Nakanoya, Annaka-sh, Gunma 25, 〒3790125, JP)
石塚徹 (〒25 群馬県安中市中野谷字松原５０７信越半導体株式会社 横野平工場内 Gunma, 〒3790125, JP)
KOBAYASHI, Norihiro (Shin-Etsu Handotai Co. Ltd., 507, Aza Matsubara, Nakanoya, Annaka-sh, Gunma 25, 〒3790125, JP)
International Classes:
H01L21/02; H01L27/12
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (1st Shitaya Bldg. 8F, 6-11 Ueno 7-chome, Taito-k, Tokyo 05, 〒1100005, JP)
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