Title:
SOLAR CELL AND METHOD FOR PRODUCING SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2018/180486
Kind Code:
A1
Abstract:
This solar cell 10 is provided with: a substrate 20 that is formed of a crystalline semiconductor of a first conductivity type; a first semiconductor layer 21 that is provided on a first region W1 of one main surface of the substrate 20; a second semiconductor layer 22 that is provided on a second region W2 of the one main surface, said second region W2 being different from the first region W1; a first transparent electrode layer 23 that is provided on the first semiconductor layer 21; and a second transparent electrode layer 24 that is provided on the second semiconductor layer 22. The first semiconductor layer 21 contains a first amorphous semiconductor layer 31 of the first conductivity type and a first crystalline semiconductor part 35 that extends from the one main surface toward the first transparent electrode layer 23. The second semiconductor layer 22 contains a second amorphous semiconductor layer 32 of a second conductivity type that is different from the first conductivity type.
Inventors:
YANO AYUMU
SENO MINATO
NANBA SHIN
SENO MINATO
NANBA SHIN
Application Number:
PCT/JP2018/009892
Publication Date:
October 04, 2018
Filing Date:
March 14, 2018
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01L31/0747
Domestic Patent References:
WO2013111312A1 | 2013-08-01 | |||
WO2017010029A1 | 2017-01-19 |
Foreign References:
US20140224307A1 | 2014-08-14 | |||
JP2012519375A | 2012-08-23 | |||
JP2015122347A | 2015-07-02 | |||
JP2015185587A | 2015-10-22 |
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
Download PDF:
Previous Patent: CHARGE TRANSPORT MATERIAL AND USE OF SAME
Next Patent: GAS BARRIER FILM AND FILM FORMING METHOD
Next Patent: GAS BARRIER FILM AND FILM FORMING METHOD