Title:
SOLID-STATE IMAGE-CAPTURING DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/029798
Kind Code:
A1
Abstract:
The present technique relates to a solid-state image-capturing device enabling appropriate generation of fine pixel signals, a method for manufacturing said device, and an electronic device. The solid-state image-capturing device is provided with a charge storage unit, a charge retention unit, and a transfer transistor. The charge storage unit is formed on a first semiconductor substrate, and stores photoelectrically converted charges. The charge retention unit is formed on a second semiconductor substrate, and retains the charges stored in the charge storage unit. The transfer transistor transfers the charges stored in the charge storage unit to the charge retention unit. The interface where the first semiconductor substrate and the second semiconductor substrate are joined is formed in a channel of the transfer transistor.
Inventors:
TAYANAKA HIROSHI (JP)
Application Number:
PCT/JP2014/071464
Publication Date:
March 05, 2015
Filing Date:
August 15, 2014
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H04N5/357; H04N5/374
Foreign References:
| JP2011159757A | 2011-08-18 | |||
| JP2013041875A | 2013-02-28 | |||
| JP2011166171A | 2011-08-25 | |||
| JPH08316450A | 1996-11-29 | |||
| JP2002314061A | 2002-10-25 | |||
| JP2014199898A | 2014-10-23 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Nishikawa 孝 (JP)
Nishikawa 孝 (JP)
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