SOLID-STATE IMAGE PICKUP DEVICE

Title:

SOLID-STATE IMAGE PICKUP DEVICE

Document Type and Number:

WIPO Patent Application WO/2013/076924

Kind Code:

A1

Abstract:

This solid-state image pickup device is provided with: a plurality of pixels (11), which are disposed in matrix; a semiconductor substrate (101); first electrodes (113), which are formed above the semiconductor substrate (101) by each pixel (11); a photoelectric conversion film (114), which is formed on the first electrodes (113), and photoelectrically converts light into signal charges; charge accumulating regions (104), which are formed on the semiconductor substrate (101), and accumulate the signal charges generated due to the photoelectric conversion performed by means of the photoelectric conversion film (114); a contact plug (107), which electrically connects a first electrode (113) of a corresponding pixel (11) and a charge accumulating region (104) to each other; an N-type impurity region (117), which is formed in a charge accumulating region (104) surface region in contact with the contact plug (107); a P-type impurity region (151) formed in a region not in contact with the contact plug (107); and a low-concentration N-type impurity region (150) formed between the N-type impurity region (117) and the P-type impurity region (151).

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Inventors:

MORI MITSUYOSHI
HIROSE YUTAKA
KATO YOSHIHISA
SAKATA YUSUKE
MASUDA HIROSHI
MIYAGAWA RYOHEI

Application Number:

PCT/JP2012/007054

Publication Date:

May 30, 2013

Filing Date:

November 02, 2012

Export Citation:

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Assignee:

PANASONIC CORP (JP)

International Classes:

H01L27/146; H04N5/357; H04N5/374

Foreign References:

JP2009158930A	2009-07-16
JP2011035095A	2011-02-17
JPH09246513A	1997-09-19
JP2000299453A	2000-10-24
JP2011014808A	2011-01-20
JP2011029337A	2011-02-10

Attorney, Agent or Firm:

NII, Hiromori (JP)
New house Extensive 守 (JP)

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