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Title:
SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/093151
Kind Code:
A1
Abstract:
The present technology relates to a solid-state image pickup device capable of suppressing deterioration of dark current characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a trench, which penetrates a semiconductor substrate in the depth direction, and which is formed between the photoelectric conversion sections respectively formed in pixels adjacent to each other; and a PN junction region as a part of the side wall of the trench, said PN junction region comprising a P-type region and an N-type region. The P-type region has a region protruding to the lower side of the N-type region. The present invention is also provided with: an inorganic photoelectric conversion section having a pn junction, and an organic photoelectric conversion section having an organic photoelectric conversion film, said inorganic photoelectric conversion section and organic photoelectric conversion section being laminated in the depth direction in a same pixel from the light receiving surface side; and a PN junction region as a part of the side wall of the inorganic photoelectric conversion section, said PN junction region comprising a P-type region and an N-type region. Furthermore, the present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a trench dug in the semiconductor substrate without penetrating the semiconductor substrate; a PN junction region as a part of the side wall of the trench, said PN junction region comprising a first P-type region and an N-type region; and a second P-type region on the light receiving surface side of the photoelectric conversion section. The present technology can be applied to, for instance, rear-surface-irradiation-type CMOS image sensors.

Inventors:
OHURA MASASHI (JP)
IWABUCHI SHIN (JP)
OKUYAMA ATSUSHI (JP)
Application Number:
PCT/JP2018/039814
Publication Date:
May 16, 2019
Filing Date:
October 26, 2018
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H01L21/22; H01L21/76; H01L31/10; H04N5/361; H04N5/369
Domestic Patent References:
WO2017187957A12017-11-02
WO2016143531A12016-09-15
Foreign References:
JP2013175494A2013-09-05
JP2015162603A2015-09-07
Other References:
See also references of EP 3709358A4
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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