Title:
SOLID-STATE IMAGING DEVICE, DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2019/009213
Kind Code:
A1
Abstract:
A pixel PXL is configured to include: a first photodiode PDSL and a second photodiode PSLS between which the saturation capacity ratio and the sensitivity ratio are different; transfer transistors TGSL-Tr, TGLS-Tr for transferring charges accumulated in the respective photodiodes to a floating diffusion FD; and a capacity variable part 80 capable of changing the capacity of the floating diffusion in response to a capacity change signal. A first saturation capacity of the first photodiode PDSL is smaller than a second saturation capacity of the second photodiode PDLS, and a first sensitivity of the first photodiode PDSL is larger than a second sensitivity of the second photodiode PDLS. This configuration makes it possible to prevent the influence of readout noise and improve image quality while implementing dynamic range expansion.
Inventors:
MORI KAZUYA (JP)
TAKAYANAGI ISAO (JP)
TANAKA SHUNSUKE (JP)
OTAKA TOSHINORI (JP)
YASUDA NAOTO (JP)
TAKAYANAGI ISAO (JP)
TANAKA SHUNSUKE (JP)
OTAKA TOSHINORI (JP)
YASUDA NAOTO (JP)
Application Number:
PCT/JP2018/024892
Publication Date:
January 10, 2019
Filing Date:
June 29, 2018
Export Citation:
Assignee:
BRILLNICS JAPAN INC (JP)
International Classes:
H04N5/355; H01L27/146; H04N5/3745
Foreign References:
| JP2016220192A | 2016-12-22 | |||
| JP2013070245A | 2013-04-18 | |||
| JP2000165754A | 2000-06-16 | |||
| JP2000165754A | 2000-06-16 |
Other References:
T. WILLASSEN ET AL.: "A 1280x1080 4.2pm Split-Diode Pixel HDR Sensor in 110nm BSI CMOS Process", INTERNATIONAL IMAGE SENSOR WORKSHOP (IISW, 8 June 2015 (2015-06-08)
See also references of EP 3651450A4
See also references of EP 3651450A4
Attorney, Agent or Firm:
IIJIMA, YASUHIRO (JP)
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