Title:
SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/130728
Kind Code:
A1
Abstract:
The present disclosure relates to a solid-state imaging device and an electronic device designed so as to capable of reducing optical crosstalk. In example B in fig. 5, a charge storage part is configured by boring a hole in a substrate, forming a diffusion layer on the surface of the hole, and forming an insulating film and an upper electrode so as to fill the hole. In example C in fig. 5, the charge storage part is configured by boring a hole in a substrate, forming a diffusion layer on half (one side) of the surface of the hole, and forming an insulation film and an upper electrode so as to fill the hole. The charge storage part (capacitive element) formed in the substrate as described above is positioned between photodiodes, which constitute a first photoelectric converter, whereby the capacitive element can play the role of a shield pair against crosstalk between the photodiodes in a unit pixel. The present disclosure is applicable, for example, to a CMOS solid-state imaging device used in an imaging device such as a camera.
Inventors:
TAKIZAWA MASAAKI (JP)
TATESHITA YASUSHI (JP)
TOYOSHIMA TAKAHIRO (JP)
TOYOFUKU TAKUYA (JP)
SAKANO YORITO (JP)
TORII MOTONOBU (JP)
TATESHITA YASUSHI (JP)
TOYOSHIMA TAKAHIRO (JP)
TOYOFUKU TAKUYA (JP)
SAKANO YORITO (JP)
TORII MOTONOBU (JP)
Application Number:
PCT/JP2017/000930
Publication Date:
August 03, 2017
Filing Date:
January 13, 2017
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H01L21/76; H04N5/369
Foreign References:
| JP2013161945A | 2013-08-19 | |||
| JP2006262388A | 2006-09-28 | |||
| JP2015153772A | 2015-08-24 | |||
| JP2014112580A | 2014-06-19 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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