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Title:
SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/014351
Kind Code:
A1
Abstract:
In the disclosed solid-state imaging device, a pixel cell is provided with a photodiode, a transfer transistor, a charge conversion unit, a reset transistor, and an amplifying transistor. Wiring is provided to the pixel cell, and a switching unit is connected to the wiring. By means of the provision of the wiring, parasitic capacitance is formed between the wiring and the charge conversion unit. The switching unit has the ability to selectively switch the electric potential state of the wiring between a ground potential and a potential that tracks a signal line potential. When the accumulated charge (Q) of the photodiode is large, the switching unit is switched to the grounded side, and when the accumulated charge (Q) of the photodiode is low, the switching unit is switched to the signal line side.

Inventors:
OHTSUKI, Hirohisa (())
Application Number:
JP2011/002020
Publication Date:
February 02, 2012
Filing Date:
April 05, 2011
Export Citation:
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Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真1006番地 Osaka, 〒5718501, JP)
International Classes:
H01L27/146; H04N5/355; H04N5/374; H04N5/3745
Foreign References:
JP2006319951A
JP2008172108A
JP2005192191A
JP2007123604A
JP2011015158A
Attorney, Agent or Firm:
NAKAJIMA, Shiro et al. (6F Yodogawa 5-Bankan, 2-1 Toyosaki 3-chome, Kita-ku, Osaka-sh, Osaka 72, 〒5310072, JP)
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Claims:



 
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