Title:
SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/225367
Kind Code:
A1
Abstract:
A solid-state imaging device comprises: an imaging element group in a two-dimensional matrix arrangement of imaging elements having a semiconductor substrate 70 or a photoelectric conversion unit 10 formed above the semiconductor substrate, and further having a wire grid polarization element 91 and an on-chip micro-lens 15; and a first interlayer insulation layer 83 and a second interlayer insulation layer 84 provided on the light impingement side of the photoelectric conversion unit 10. The wire grid polarization element 91 is provided between the first interlayer insulation layer 83 and the second interlayer insulation layer 84, the on-chip micro-lens 15 is provided on the second insulation layer 84, the first interlayer insulation layer 83 and the second interlayer insulation layer 84 comprise an oxide material or a resin material, and the on-chip micro-lens comprises SiN or SiON.
Inventors:
YANAGITA TAKESHI (JP)
ASATSUMA TOMOHIKO (JP)
ASATSUMA TOMOHIKO (JP)
Application Number:
PCT/JP2018/014750
Publication Date:
December 13, 2018
Filing Date:
April 06, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; G02B3/00; G02B5/20; G02B5/30; H04N5/369; H04N9/07
Domestic Patent References:
| WO2014148276A1 | 2014-09-25 |
Foreign References:
| JP2017076684A | 2017-04-20 | |||
| JP2003338613A | 2003-11-28 | |||
| JP2012023251A | 2012-02-02 | |||
| JP2016072266A | 2016-05-09 |
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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