Title:
SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND METHOD FOR CONTROLLING SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/171717
Kind Code:
A1
Abstract:
Provided is a solid-state imaging element in which exposure is performed by all pixels simultaneously, the solid-state imaging element having improved PLS resistance. A preliminary transfer transistor transfers charge from a photoelectric conversion element to a preliminary charge holding region and a subsequent charge holding region having different capacitances. A subsequent transfer transistor transfers charge from the subsequent charge holding region to a floating diffusion region. An intermediate transfer transistor transfers charge that remains in the preliminary charge holding region after charge is transferred from the subsequent charge holding region to the floating diffusion region, to the floating diffusion region via the preliminary charge holding region.
Inventors:
ASAKURA LUONGHUNG (JP)
Application Number:
PCT/JP2020/043731
Publication Date:
September 02, 2021
Filing Date:
November 25, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H04N5/369
Foreign References:
| JP2018147975A | 2018-09-20 | |||
| JP2018160485A | 2018-10-11 | |||
| JP2017076899A | 2017-04-20 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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