Title:
SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND METHOD FOR CONTROLLING SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/067961
Kind Code:
A1
Abstract:
The present invention improves the image quality of a solid-state imaging element that uses a voltage domain method. A transfer transistor transfers electric charges from a photoelectric conversion element to a floating diffusion layer. A reset transistor initializes the floating diffusion layer. A preliminary-stage amplification transistor amplifies and outputs the voltage of the floating diffusion layer. A plurality of capacitive elements hold the output voltage. A vertical scanning circuit soft-resets the preliminary-stage amplification transistor when causing any of the plurality of capacitive elements to hold the reset level which is the voltage at the time when the floating diffusion layer has been initialized.
Inventors:
ANJYOU KENICHIROU (JP)
Application Number:
PCT/JP2022/034705
Publication Date:
April 27, 2023
Filing Date:
September 16, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H04N25/70; H04N25/65; H04N25/77; H04N25/771
Domestic Patent References:
| WO2019069614A1 | 2019-04-11 |
Foreign References:
| JP2010034890A | 2010-02-12 | |||
| JP2020039017A | 2020-03-12 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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