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Title:
SOLID STATE IMAGING ELEMENT AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2016/084629
Kind Code:
A1
Abstract:
The present invention relates to a solid state imaging element and electronic equipment, capable of high SN ratio at high sensitivity, without degradation of resolution. Pixel in a photoelectric conversion portion that absorbs a first wavelength on an upper layer are obliquely arrayed two-dimensionally in each of a plurality of horizontal directions and vertical directions, each in a tilted state by approximately 45 degree relative to a square pixel array. Then, in the lower part thereof, pixels from a photoelectric conversion portion are arrayed, each sensitive to light of a second or third wavelength. That is to say, since the pixels are obliquely arrayed with a √2-fold size (twice the surface area) and a 45 degree rotation, the Nyquist domain in the oblique direction becomes as small as a Bayer array, while the Nyquist domain sizes in the vertical and horizontal directions are maintained. The present invention can be applied, for instance, to a solid state imaging element used in an imaging device.

Inventors:
TODA ATSUSHI (JP)
Application Number:
PCT/JP2015/081998
Publication Date:
June 02, 2016
Filing Date:
November 13, 2015
Export Citation:
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Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H01L27/14; H04N5/369; H04N5/374; H04N9/07
Domestic Patent References:
WO2012161225A12012-11-29
Foreign References:
JP2009054806A2009-03-12
JP2006270021A2006-10-05
JP2010272666A2010-12-02
JP2006229022A2006-08-31
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Nishikawa 孝 (JP)
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