SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE

WIPO Patent Application WO/2017/163559

A1

A solid-state imaging element according to the present disclosure is provided with: a photoelectric conversion film which is disposed outside a semiconductor substrate on a pixel by pixel basis, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in wavelength regions other than the predetermined wavelength region; and a photoelectric conversion region which is disposed inside the semiconductor substrate on a pixel by pixel basis and performs photoelectric conversion with respect to the light in the wavelength regions transmitted by the photoelectric conversion film. The photoelectric conversion film comprises a film having an avalanche function.

WO/2004/086506	PHOTODIODE ARRAY AND PRODUCTION METHOD THEREOF, AND RADIATION DETECTOR
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KATO NANAKO (JP)
WAKANO TOSHIFUMI (JP)
OTAKE YUSUKE (JP)

PCT/JP2017/001581

September 28, 2017

January 18, 2017

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SONY CORP (JP)

H01L27/146; H01L27/14; H01L31/107; H04N5/369; H04N9/07

WO2014027588A1

2014-02-20

JPH06204445A	1994-07-22
JP2010177392A	2010-08-12
JP2006245284A	2006-09-14
JPH07169931A	1995-07-04
JP2013030592A	2013-02-07
JP2011199057A	2011-10-06
JP2004288992A	2004-10-14

YAMAMOTO Takahisa et al. (JP)

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