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Title:
SOLID STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2017/169719
Kind Code:
A1
Abstract:
The present invention relates to a solid state imaging element and an electronic apparatus such that a drop in light-collection efficiency and a deterioration of resistance to oblique light can be minimized, and a reduction in the profile of the solid state imaging element can be achieved. In a first aspect of the present invention, the solid state imaging element is a vertical spectral separation type solid state imaging element wherein a plurality of photoelectric conversion portions are layered in each pixel region. The solid state imaging element comprises: a first photoelectric conversion module having a first photoelectric conversion portion for performing photoelectric conversion of a light beam in a first wavelength region of incoming light beam, a first upper electrode and a first lower electrode formed so as to sandwich the first photoelectric conversion portion therebetween, and a first spectral correction portion formed by being layered on the first photoelectric conversion unit between the first upper electrode and the first lower electrode; and a second photoelectric conversion portion performing photoelectric conversion of a light beam in a second wavelength region different from the first wavelength region of the light beam that has passed through the first photoelectric conversion module. The present invention is applicable, for instance, to a CMOS image sensor.

Inventors:
MOGI HIDEAKI (JP)
HIROSE YOHEI (JP)
HIRATA SHINTAROU (JP)
KUMAGAI YUYA (JP)
YAMAGUCHI TETSUJI (JP)
MURATA MASAKI (JP)
UJIIE YASUHARU (JP)
Application Number:
PCT/JP2017/010103
Publication Date:
October 05, 2017
Filing Date:
March 14, 2017
Export Citation:
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Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H01L31/0232; H04N5/369
Domestic Patent References:
WO2015178116A12015-11-26
WO2016027675A12016-02-25
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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