Title:
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/101078
Kind Code:
A1
Abstract:
The present invention pertains to a solid-state imaging element that enables suppression of fluctuation in photoelectric conversion characteristics of an organic photoelectric conversion film caused by exposure to air, a method for manufacturing the solid-state imaging element, and an electronic device. This solid-state imaging element is provided with: a photoelectric conversion film that is formed on the upper side of a semiconductor substrate; and side walls that seal the side surfaces of the photoelectric conversion film. The side walls are formed of a film obtained through re-deposition of a film directly below. The present invention can be applied to, for example, a CMOS image sensor, etc.
Inventors:
JOEI MASAHIRO (JP)
MURATA KENICHI (JP)
MURATA KENICHI (JP)
Application Number:
PCT/JP2017/041419
Publication Date:
June 07, 2018
Filing Date:
November 17, 2017
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H01L27/30; H01L51/42; H04N5/374
Domestic Patent References:
| WO2016114377A1 | 2016-07-21 |
Foreign References:
| JP2015015332A | 2015-01-22 | |||
| JP2014017374A | 2014-01-30 | |||
| JP2011071483A | 2011-04-07 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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