Title:
SOLID-STATE IMAGING ELEMENT AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2019/097971
Kind Code:
A1
Abstract:
According to one embodiment of the present invention, a solid-state imaging element is provided with: a semiconductor substrate (100); a PN junction photodiode (PD1) which is formed in the surface of the semiconductor substrate (100); an insulating film (106) which is formed on the surface of the semiconductor substrate (100) including the surface region where the photodiode (PD1) is formed; and a metal electrode (MTL) which is formed in a wiring layer that is at a higher position than a first wiring layer that is adjacent to the photodiode (PD1) among a plurality of wiring layers that are laminated on the insulating film (106), and to which a negative voltage is applied.
Inventors:
HARAGUCHI YOSHIZUMI (JP)
FUKUDA SEISUKE (JP)
IKEDA HIROKAZU (JP)
FUKUDA SEISUKE (JP)
IKEDA HIROKAZU (JP)
Application Number:
PCT/JP2018/039594
Publication Date:
May 23, 2019
Filing Date:
October 25, 2018
Export Citation:
Assignee:
MACH CORP CO LTD (JP)
JAPAN AEROSPACE EXPLORATION (JP)
JAPAN AEROSPACE EXPLORATION (JP)
International Classes:
H01L27/146; H01L31/10; H04N5/369
Domestic Patent References:
| WO2012117931A1 | 2012-09-07 | |||
| WO2017018258A1 | 2017-02-02 |
Foreign References:
| JP2013012556A | 2013-01-17 |
Attorney, Agent or Firm:
IEIRI Takeshi (JP)
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