Title:
SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/105713
Kind Code:
A1
Abstract:
The solid-state imaging element (100) according to the present disclosure is provided with a first semiconductor substrate (200) having a photoelectric conversion element (102), and a second semiconductor substrate (300) facing the first semiconductor substrate (200) with an insulating film (240) interposed therebetween. The second semiconductor substrate (300) has: on a first main surface (MSa), an amplification transistor (104) for amplifying an electrical signal outputted from a photoelectric conversion element (102); and on a second main surface (MSb) on the opposite side from the first main surface (MSa), a region (302) having a lower resistance than the second semiconductor substrate (300). The second semiconductor substrate (300) is grounded via the region (302).
Inventors:
GOCHO TETSUO (JP)
NAGATA MASAMI (JP)
NAGATA MASAMI (JP)
Application Number:
PCT/JP2019/045680
Publication Date:
May 28, 2020
Filing Date:
November 21, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/3205; H01L21/768; H01L21/822; H01L21/8234; H01L23/522; H01L27/00; H01L27/04; H01L27/088; H01L27/146; H04N5/369
Domestic Patent References:
WO2013161331A1 | 2013-10-31 | |||
WO2017057277A1 | 2017-04-06 |
Foreign References:
JP2016086164A | 2016-05-19 | |||
JP2000196089A | 2000-07-14 | |||
JP2013118345A | 2013-06-13 | |||
JP2010245506A | 2010-10-28 |
Other References:
See also references of EP 3886144A4
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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