SOURCE CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF

Title:

SOURCE CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF

Document Type and Number:

WIPO Patent Application WO/2020/147119

Kind Code:

A1

Abstract:

Embodiments of three-dimensional (3D) memory devices having source contact structure in a memory stack are disclosed. The 3D memory device has a memory stack that includes a plurality of interleaved conductor layers and insulating layers extending over a substrate, a plurality of channel structures each extending vertically through the memory stack into the substrate, and a source contact structure extending vertically through the memory stack and extending laterally to separate the memory stack into a first portion and a second portion. The source contact structure may include a plurality of source contacts each electrically coupled to a common source of the plurality of channel structures.

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Inventors:

LIU YIHUA (CN)
LIU JUN (CN)
FAN LUMING (CN)

Application Number:

PCT/CN2019/072365

Publication Date:

July 23, 2020

Filing Date:

January 18, 2019

Export Citation:

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Assignee:

YANGTZE MEMORY TECH CO LTD (CN)

International Classes:

H01L27/11582

Domestic Patent References:

WO2016148748A1

2016-09-22

Foreign References:

CN109075169A	2018-12-21
US20170047334A1	2017-02-16
CN109155316A	2019-01-04
US20160141419A1	2016-05-19
US20160148947A1	2016-05-26
US20130214344A1	2013-08-22

Other References: