SOURCE GAS SUPPLY APPARATUS

WIPO Patent Application WO/2010/038972

A2

Disclosed is a source gas supply apparatus for gasifying source materials which are used as raw materials for thin film deposition by chemical vapor deposition, and supplying the gas into a deposition chamber. The source gas supply apparatus (200) according to the present invention comprises: a source gas generating unit (210) for heating source materials to generate source gas; and a source gas condensation unit (240) where the source gas generated by the source gas generating unit (210) is introduced and condensed. The source gas supply apparatus (200) of the present invention enables the feeding of source gas from the source gas generating unit (210) to the source gas condensation unit (240) to proceed to condense the source gas in the source gas condensation unit (240) until the volume of condensation of the source gas condensed in the source gas condensation unit (240) reaches a saturated level. The source gas supply apparatus (200) of the present invention cuts off the feeding of source gas from the source gas generating unit (210) to the source gas condensation unit (240) after the volume of condensation of the source gas condensed in the source gas condensation unit (240) has reached the saturated level, and enables the source gas condensed in the source gas condensation unit (240) to flow into a deposition chamber (250).

LEE BYUNG IL (KR)
JANG SEOK PIL (KR)
PARK KYOUNG WAN (KR)
SONG JONG HO (KR)

PCT/KR2009/005584

April 08, 2010

September 30, 2009

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TERA SEMICON CORP (KR)
LEE BYUNG IL (KR)
JANG SEOK PIL (KR)
PARK KYOUNG WAN (KR)
SONG JONG HO (KR)

H01L21/205

KR20080072119A	2008-08-06
JP2004015005A	2004-01-15
US20060144338A1	2006-07-06

KIM, HAN (KR)
김한 (KR)

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