Title:
SPALLING FOR A SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2011/106203
Kind Code:
A3
Abstract:
A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.
Inventors:
BEDELL STEPHEN W (US)
FOGEL KEITH E (US)
LAURO PAUL A (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
FOGEL KEITH E (US)
LAURO PAUL A (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
Application Number:
PCT/US2011/024948
Publication Date:
November 17, 2011
Filing Date:
February 16, 2011
Export Citation:
Assignee:
IBM (US)
BEDELL STEPHEN W (US)
FOGEL KEITH E (US)
LAURO PAUL A (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
BEDELL STEPHEN W (US)
FOGEL KEITH E (US)
LAURO PAUL A (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
International Classes:
H01L21/304; B28D5/00
Foreign References:
| US20050217560A1 | 2005-10-06 | |||
| US20060228846A1 | 2006-10-12 | |||
| US6492682B1 | 2002-12-10 |
Attorney, Agent or Firm:
PETROKAITIS, Joseph (2070 Route 52 MD 48, Hopewell Junction NY, US)
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