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Patent Searching and Data


Title:
SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2017/090739
Kind Code:
A1
Abstract:
This spin current magnetization reversal element comprises: a first ferromagnetic metal layer that has a variable magnetization direction; and spin orbit torque wiring that is joined to a first surface of the first ferromagnetic metal layer and that extends in a second direction that intersects a first direction, which is the direction normal to the first ferromagnetic metal layer. The spin orbit torque wiring comprises: a pure spin current generating part that is joined to the first ferromagnetic metal layer; and a low-resistance part that is connected to both second-direction ends of the pure spin current generating part 2A and that comprises a material that has a lower electrical resistivity than the pure spin current generating part. The pure spin current generating part is formed such that the area of a cross-section thereof that is orthogonal to the first direction increases continuously or in stages in the first direction with increasing distance from a joining surface that is joined to the first ferromagnetic metal layer.

Inventors:
SHIOKAWA YOHEI (JP)
SASAKI TOMOYUKI (JP)
Application Number:
PCT/JP2016/085001
Publication Date:
June 01, 2017
Filing Date:
November 25, 2016
Export Citation:
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Assignee:
TDK CORP (JP)
International Classes:
H01L43/08; G11B5/39; H01L21/8246; H01L27/105; H01L29/82; H03B15/00
Foreign References:
US20150036415A12015-02-05
JP2009194070A2009-08-27
US20150213869A12015-07-30
JP2014179618A2014-09-25
Other References:
See also references of EP 3382768A4
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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