SPIN DEPENDENT TUNNELING DEVICES HAVING REDUCED TOPOLOGICAL COUPLING

Title:

SPIN DEPENDENT TUNNELING DEVICES HAVING REDUCED TOPOLOGICAL COUPLING

Document Type and Number:

WIPO Patent Application WO2003083499

Kind Code:

A3

Abstract:

The structure in the layer stack representation diagram with electrode terminations is shown by wavy lines and ferromagnetic material layer (15). The magnetization direction possibilities represents an improvement for such spin dependent tunneling sensing devices in which a thin ferromagnetic material layer insert (12'), as a topological, or organe peel, coupling compensation layer and a ruthenium layer (12''), as an antiparallel coupling layer are both added to the device layer stack immediately below tunneling barrier (14).

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Inventors:

DAUGHTON JAMES M
WANG DEXIN

Application Number:

PCT/US2003/009185

Publication Date:

March 25, 2004

Filing Date:

March 23, 2003

Export Citation:

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Assignee:

NVE CORP (US)

International Classes:

G01R33/09; H01L43/08; (IPC1-7): G01R33/02; G11B5/30

Foreign References:

US5677625A	1997-10-14
US6384600B1	2002-05-07

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