Title:
SPIN ELECTRONIC MEMORY AND SPIN ELECTRONIC CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2013/125101
Kind Code:
A1
Abstract:
[Problem] To provide a spin electronic memory and a spin electronic circuit, both of which enable electric power saving in an electronic device. [Solution] A spin electronic memory according to the present invention is characterized by being equipped with at least a pair of electrodes and a spin flow generation layer which is arranged between the electrodes, comprises an alloy layer (A) having a thickness of 0 to 2 nm exclusive and mainly composed of Sb2Te3 or Bi2Te3 and an alloy layer (B) laminated adjacent to the alloy layer (A) and mainly composed of GeTe, and can generate a density difference between two spin electrons that have different spin states from each other in the alloy layer (A) on the basis of a voltage applied from the electrodes, wherein a memory operation is carried out utilizing one of the spin electrons which has a higher density.
Inventors:
TOMINAGA JUNJI (JP)
KOLOBOV ALEXANDER (JP)
FONS PAUL (JP)
KOLOBOV ALEXANDER (JP)
FONS PAUL (JP)
Application Number:
PCT/JP2012/078473
Publication Date:
August 29, 2013
Filing Date:
November 02, 2012
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
International Classes:
H01L21/8246; H01L27/105; H01L29/82
Foreign References:
| JP2007027441A | 2007-02-01 |
Other References:
WEI ZHANG ET AL.: "First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3", NEW JOURNAL OF PHYSICS, vol. 12, 17 June 2010 (2010-06-17), pages 1 - 14, XP020176300
Attorney, Agent or Firm:
SHIODA Shin (JP)
Salt farm Growth (JP)
Salt farm Growth (JP)
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Claims:
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