Title:
SPIN ELECTRONIC MEMORY, INFORMATION RECORDING METHOD AND INFORMATION REPRODUCING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/072228
Kind Code:
A1
Abstract:
[Solution] A spin electronic memory of the present invention is characterized by being formed by laminating at least a pair of electrodes (1, 2), a first alloy layer (5) that is mainly composed of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe or Bi2Se3 and has a thickness of from 2 nm to 10 nm (inclusive), and a second alloy layer (4) that is mainly composed of an alloy represented by general formula (1). This spin electronic memory is also characterized by comprising recording layers (6a, 6b, 6c) that are arranged between the electrodes (1, 2) and a spin injection layer (7) which is formed of a magnetic material that is to be magnetized, and which injects spin-polarized electrons into the recording layers. M1-xTex (1) In formula (1), M represents a Ge atom, an Al atom or an Si atom, and x represents a number of 0.5 or more but less than 1.
Inventors:
TOMINAGA JUNJI (JP)
Application Number:
PCT/JP2014/074796
Publication Date:
May 21, 2015
Filing Date:
September 19, 2014
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L29/82; H01L45/00
Domestic Patent References:
| WO2013125101A1 | 2013-08-29 |
Foreign References:
| JP2013051245A | 2013-03-14 | |||
| JP2011138924A | 2011-07-14 |
Other References:
JUNJI TOMINAGA: "Topological insulating and spin-properties emerged inGeTe/Sb_2Te_3 superlatticed phase change memory", ABSTRACTS OF THE MEETING OF THE PHYSICAL SOCIETY OF JAPAN, vol. 68, no. 2, 26 August 2013 (2013-08-26), pages 603
Attorney, Agent or Firm:
SHIODA Shin (JP)
Salt farm Growth (JP)
Salt farm Growth (JP)
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