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Title:
SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY UNIT AND MAGNETIC RANDOM ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/177451
Kind Code:
A1
Abstract:
Provided in the present invention is a spin-orbit torque magnetic random access memory unit, comprising: a first spin-orbit torque providing layer, a second spin-orbit torque providing layer, a third spin-orbit torque providing layer, two magnetic tunnel junction groups, two bidirectional selectors and a transistor, a magnetic tunnel junction group comprising two vertically stacked magnetic tunnel junctions, there being a separation layer between the two magnetic tunnel junctions, reference layers of the two magnetic tunnel junctions being near the separation layer, and free layers of the two magnetic tunnel junctions being a bottom layer and a top layer of a magnetic tunnel junction group, respectively; the bottom layer of a magnetic tunnel junction group being adjacent to a top surface of the first spin-orbit torque providing layer, the top layer being adjacent to a bottom surface of the second spin-orbit torque providing layer, the bottom layer of the other magnetic tunneling junction group being adjacent to a top surface of the second spin-orbit torque providing layer, the top layer being adjacent to a bottom surface of the third spin-orbit torque providing layer, and the magnetic tunneling junctions at two sides of the second spin-orbit torque providing layer having different current flip thresholds. The present invention can increase SOT-MRAM memory density.

Inventors:
YIN BIAO (CN)
MENG HAO (CN)
LI ZHOU (CN)
Application Number:
PCT/CN2019/127402
Publication Date:
September 10, 2020
Filing Date:
December 23, 2019
Export Citation:
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Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
G11C11/15
Foreign References:
CN1492443A2004-04-28
CN107481749A2017-12-15
CN104393169A2015-03-04
CN107481755A2017-12-15
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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