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Title:
SPIN-ORBIT TORQUE MAGNETIZATION ROTATION ELEMENT, SPIN-ORBIT TORQUE MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND HIGH-FREQUENCY MAGNETIC ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/110296
Kind Code:
A1
Abstract:
This spin-orbit torque magnetization rotation element is provided with: a first ferromagnetic layer; a spin-orbit torque wire having a first surface facing the first ferromagnetic layer and a major axis extending in a first direction in a plan view seen from the layering direction of the first ferromagnetic layer; and an underlayer which contacts a second surface of the spin-orbit torque wire opposite the first surface thereof. The spin-orbit torque wire has, at positions overlapping the first ferromagnetic layer in the plan view seen from the layering direction, a first domain having a first crystal orientation axis and another region having a different crystal state from the first domain. The first crystal orientation axis of the first domain is continuous from the underlayer.

Inventors:
ISHITANI YUGO (JP)
SASAKI TOMOYUKI (JP)
SHIOKAWA YOHEI (JP)
Application Number:
PCT/JP2018/044216
Publication Date:
June 04, 2020
Filing Date:
November 30, 2018
Export Citation:
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Assignee:
TDK CORP (JP)
International Classes:
H01L21/8239; H01L43/08; H01L27/105; H01L29/82
Domestic Patent References:
WO2018180701A12018-10-04
Foreign References:
JP2018073934A2018-05-10
JP2018093059A2018-06-14
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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