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Title:
SPIN-ORBIT TORQUE MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/230351
Kind Code:
A1
Abstract:
This spin-orbit torque magnetoresistance effect element (101) is provided with a first ferromagnetic layer (1), a second ferromagnetic layer (2), a nonmagnetic layer (3) positioned between the first ferromagnetic layer and the second ferromagnetic layer, and spin-orbit torque wiring (5) on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction (X) crossing a first direction (Z), which is the direction normal to the first ferromagnetic layer. The first ferromagnetic layer comprises, in order from the spin-orbit torque wiring side, a first laminate structure (10a) and an interfacial magnetic layer (20), the first laminate structure comprises a ferromagnetic conductor layer (11a) and an oxide-containing layer (12a) arranged in order from the spin-orbit torque wiring side, and the ferromagnetic conductor layer contains a ferromagnetic metal element, and the oxide-containing layer contains an oxide of a ferromagnetic metal element.

Inventors:
SHIOKAWA YOHEI (JP)
Application Number:
PCT/JP2019/018897
Publication Date:
December 05, 2019
Filing Date:
May 13, 2019
Export Citation:
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Assignee:
TDK CORP (JP)
International Classes:
H01L29/82; H01F10/32; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
WO2018185991A12018-10-11
Foreign References:
JP6290487B12018-03-07
US20140252439A12014-09-11
US20160300999A12016-10-13
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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