Title:
SPUTTERING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/168942
Kind Code:
A1
Abstract:
The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal sweeping mechanism 14 for reciprocally sweeping the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.
Inventors:
KISHIDA SHIGEAKI (JP)
MATSUO DAISUKE (JP)
MATSUO DAISUKE (JP)
Application Number:
PCT/JP2018/010013
Publication Date:
September 20, 2018
Filing Date:
March 14, 2018
Export Citation:
Assignee:
NISSIN ELECTRIC CO LTD (JP)
International Classes:
C23C14/40; H05H1/46
Foreign References:
JP2014037555A | 2014-02-27 | |||
JP2017004602A | 2017-01-05 | |||
JP2015172240A | 2015-10-01 |
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