Title:
SPUTTERING SOURCE, SPUTTERING SYSTEM, METHOD FOR FORMING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2006/070633
Kind Code:
A1
Abstract:
A sputter film formed on the surface of an organic thin film without causing any damage thereon. Opening of the housing (101) of sputter sources (11-13) is closed with a shielding plate (103) and trap magnets (1051, 1052) are arranged on the opposite sides of the opening (107a). A target section (120) is arranged in the housing (101) and at the time of sputtering, the shielding plate (103) is connected with the earth potential, negatively charged particles such as electrons are entered into the shielding plate (103), and flying direction of the charged particles passed through the opening (107a) is curved by a magnetic field formed by the trap magnets (1051, 1052). Since the charged particles do not impinge on the surface of an object whereupon a film is to be formed when the object traverses above the sputter sources (11-13), damage on the organic thin film is suppressed.
Inventors:
NEGISHI TOSHIO (JP)
ITO MASAHIRO (JP)
ITO MASAHIRO (JP)
Application Number:
PCT/JP2005/023276
Publication Date:
July 06, 2006
Filing Date:
December 19, 2005
Export Citation:
Assignee:
ULVAC INC (JP)
NEGISHI TOSHIO (JP)
ITO MASAHIRO (JP)
NEGISHI TOSHIO (JP)
ITO MASAHIRO (JP)
International Classes:
C23C14/34; H01L51/50; H05B33/10
Foreign References:
| JPH10228981A | 1998-08-25 | |||
| JPH10140344A | 1998-05-26 | |||
| JP2002339061A | 2002-11-27 | |||
| JPH03243761A | 1991-10-30 | |||
| JPH10158821A | 1998-06-16 |
Attorney, Agent or Firm:
Ishijima, Shigeo (3F 1-2-18, Toranomo, Minato-ku Tokyo 01, JP)
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