Title:
SPUTTERING TARGET BACKING PLATE AND SPUTTERING TARGET/BACKING PLATE ASSEMBLY
Document Type and Number:
WIPO Patent Application WO/2001/000899
Kind Code:
A1
Abstract:
A backing plate material small in deformation even in a high-temperature environment such as high-power sputtering and excellent in heat conductivity. A sputtering gate backing plate characterized by being made of a Cu alloy having a 0.2% proof stress of not less than 200 MPa and an assembly formed by joining the backing plate and a sputtering target together. Preferably, the assembly is formed by solid-state-welding the backing plate and the sputtering target together by using as the backing plate a Cu alloy containing 0.7 to 1.2 wt.% of Cr, not more than 1 wt.% of a total of components selected from a group of Al, Mg, S, K, Ca, Fe, Ni, As, Ag, Sb and Bi and a remaining component of Cu.
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Inventors:
OKABE TAKEO (JP)
FUKUYO HIDEAKI (JP)
FUKUYO HIDEAKI (JP)
Application Number:
PCT/JP1999/003480
Publication Date:
January 04, 2001
Filing Date:
June 29, 1999
Export Citation:
Assignee:
JAPAN ENERGY CORP (JP)
OKABE TAKEO (JP)
FUKUYO HIDEAKI (JP)
OKABE TAKEO (JP)
FUKUYO HIDEAKI (JP)
International Classes:
B25B27/20; B60R13/02; C23C14/34; H01L21/285; (IPC1-7): C23C14/34; H01L21/285
Foreign References:
| JPH0448072A | 1992-02-18 | |||
| JPH0379734A | 1991-04-04 | |||
| JPH08269704A | 1996-10-15 | |||
| JPH10330929A | 1998-12-15 |
Other References:
JIS, Z 3234 (Japanese Standards Association), 30 June 1977 (30.06.77).
Attorney, Agent or Firm:
Ogoshi, Isamu (7th floor 4-1, Nishi-Shimbashi 3-chome Minato-ku Tokyo, JP)
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