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Title:
SPUTTERING TARGET COMPRISING OXIDE PHASE DISPERSED IN CO OR CO ALLOY PHASE, MAGNETIC MATERIAL THIN FILM COMPRISING CO OR CO ALLOY PHASE AND OXIDE PHASE, AND MAGNETIC RECORDING MEDIUM PRODUCED USING THE MAGNETIC MATERIAL THIN FILM
Document Type and Number:
WIPO Patent Application WO/2011/070850
Kind Code:
A1
Abstract:
Disclosed is a sputtering target comprising an oxide phase dispersed in a Co or Co alloy phase. The sputtering target comprises: a Co-containing metal matrix phase; and a phase containing SiO2 and having an oxide dispersed therein in an amount of 6 to 14 mol% so as to form particles (referred to as "an oxide phase", hereinafter). The sputtering target is characterized in that a Cr oxide is scattered in the oxide phase or the surface area of the oxide phase in an amount of not less than 0.3 mol% and less than 1.0 mol% in addition to components constituting the metal matrix phase and the oxide phase, and the average surface area of particles contained in the oxide phase is 2.0 μm2 or less. The sputtering target comprising an oxide phase dispersed in a Co or Co alloy phase enables the reduction in arcing, can achieve steady electrical discharge in a magnetron sputtering device, and produces a reduced amount of particles upon sputtering at a high density.

Inventors:
IKEDA YUKI (JP)
NAKAMURA YUICHIRO (JP)
OGINO SHIN-ICHI (JP)
Application Number:
PCT/JP2010/067947
Publication Date:
June 16, 2011
Filing Date:
October 13, 2010
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
IKEDA YUKI (JP)
NAKAMURA YUICHIRO (JP)
OGINO SHIN-ICHI (JP)
International Classes:
C23C14/34; C23C14/06; C23C14/14; G11B5/64; G11B5/851; H01F10/16; H01F10/18; H01F41/18
Foreign References:
JP2007031808A2007-02-08
JP2009215617A2009-09-24
Other References:
DAVID. E. LAUGHLIN ET AL.: "Topology and elemental distribution in Co alloy: oxide perpendicular media", JOURNAL OF APPLIED PHYSICS, vol. 105, 1 April 2009 (2009-04-01), pages 07B739
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
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