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Title:
SPUTTERING TARGET FOR ELECTROMAGNETIC SHIELDING, AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2019/117384
Kind Code:
A1
Abstract:
The present invention relates to a sputtering target and a method for producing same. The present invention presents as an embodiment a sputtering target which is a target used in a sputtering process, is composed of at least one material among materials having an FCC crystal structure and materials having a BCC crystal structure, and has an electromagnetic shielding capacity of at least 60 dB when formed as a thin film having a thickness of 5 µm using a sputtering process, and presents a method for producing same.

Inventors:
KWON, Oh-Jib (307-402, 29 Haedoji-ro 84beon-gil,,Yeonsu-gu, Incheon, 21996, KR)
HONG, Gil-Soo (2307-1201, 803 Hogupo-ro,,Namdong-gu, Incheon, 21562, KR)
PARK, Joo-Hyeon (121-902, 120 Soseong-ro,,Nam-gu, Incheon, 22202, KR)
Application Number:
KR2017/014914
Publication Date:
June 20, 2019
Filing Date:
December 18, 2017
Export Citation:
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Assignee:
LT METAL CO.,LTD. (14 Gajaeul-ro, Seo-gu, Incheon, 22828, KR)
International Classes:
C23C14/34; B22F3/12; B22F3/24; B22F5/00; H01J37/34
Foreign References:
KR100877551B12009-01-07
KR20160149720A2016-12-28
KR20100028365A2010-03-12
KR20030063372A2003-07-28
KR20160123134A2016-10-25
KR20060026114A2006-03-22
Attorney, Agent or Firm:
C.M. PATENT & LAW FIRM. LLP (2F 39, Teheran-ro 25-gil,Gangnam-gu, Seoul, 06131, KR)
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