Title:
SPUTTERING TARGET FOR FORMING MAGNETIC THIN FILM
Document Type and Number:
WIPO Patent Application WO/2016/133047
Kind Code:
A1
Abstract:
The present invention is a sputtering target comprising a Co-containing alloy and boron and/or an oxide of boron, the sputtering target being characterized in that the metal boron in boron oxide (B2O3) that dissolves into water is 7000 µg/m2 or less. The present invention addresses the problem of providing a sputtering target suitable for forming magnetic recording films, the sputtering target being capable of limiting the generation of particles resulting from the elution of B2O3 during sputtering.
Inventors:
MORISHITA YUTO (JP)
Application Number:
PCT/JP2016/054300
Publication Date:
August 25, 2016
Filing Date:
February 15, 2016
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C22C19/07; C22C32/00; G11B5/851; B22F1/12
Domestic Patent References:
| WO2014178310A1 | 2014-11-06 |
Foreign References:
| JP2012117147A | 2012-06-21 | |||
| JP2006351164A | 2006-12-28 | |||
| JPH11158607A | 1999-06-15 |
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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