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Title:
SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2012/086300
Kind Code:
A1
Abstract:
A SiO2-containing sputtering target for a magnetic recording film, which is characterized in that the ratio of the peak intensity of face (011) of quarts relative to the background intensity (i.e., quartz peak intensity/background intensity) in X-ray diffraction is 1.40 or more. The purpose of the present invention is to produce a sputtering target for a magnetic recording film, whereby it becomes possible to prevent the formation of cristobalite that causes the generation of particles in the target during sputtering, to shorten a burn-in time, to finely separate magnetic single domain particles magnetically after film formation, and to improve recording density.

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Inventors:
OGINO SHIN-ICHI (JP)
NARA ATSUSHI (JP)
TAKAMI HIDEO (JP)
Application Number:
PCT/JP2011/073993
Publication Date:
June 28, 2012
Filing Date:
October 19, 2011
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
OGINO SHIN-ICHI (JP)
NARA ATSUSHI (JP)
TAKAMI HIDEO (JP)
International Classes:
G11B5/851; B22F3/14; C22C1/05; C22C19/07; C22C32/00; C22C38/00; C23C14/34; G11B5/64; G11B5/65
Foreign References:
JP2005097657A2005-04-14
JP2004339586A2004-12-02
JP2002309366A2002-10-23
JP2001064766A2001-03-13
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
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Claims:



 
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