Title:
SPUTTERING TARGET MATERIAL
Document Type and Number:
WIPO Patent Application WO/2017/204158
Kind Code:
A1
Abstract:
Provided is a sputtering target material which has an improved strength without using pure Ta, can be prevented from forming cracks or particles during sputtering, and can be prevented from having a non-uniform composition in a sputtered film. The sputtering target material according to the present invention comprises, in at.%, 35-50% of Ta, the remaining portion being Ni and incidental impurities, wherein the material consists only of a Ni2Ta compound phase and a NiTa compound phase, and the microstructures of the Ni2Ta compound phase and the NiTa compound phase have a maximum inscribed circle diameter of 10 μm or less.
Inventors:
HASEGAWA HIROYUKI (JP)
SHINMURA YUMEKI (JP)
SHINMURA YUMEKI (JP)
Application Number:
PCT/JP2017/019023
Publication Date:
November 30, 2017
Filing Date:
May 22, 2017
Export Citation:
Assignee:
SANYO SPECIAL STEEL CO LTD (JP)
International Classes:
C23C14/34; C22C19/03; G11B5/738; G11B5/851; B22F1/00
Foreign References:
| JP2013127111A | 2013-06-27 | |||
| US7828913B1 | 2010-11-09 | |||
| JP2000206314A | 2000-07-28 | |||
| JP4499044B2 | 2010-07-07 |
Attorney, Agent or Firm:
NAGAI Hiroshi et al. (JP)
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