Title:
SPUTTERING TARGET AND METHOD OF FILM FORMATION
Document Type and Number:
WIPO Patent Application WO/2010/074171
Kind Code:
A1
Abstract:
A sputtering target characterized by comprising: either cobalt and platinum or cobalt, chromium, and platinum; SiO2 and/or TiO2; and Co3O4 and/or CoO. By conducting sputtering using the sputtering target, a magnetic recording film having a granular structure and high coercive force can be formed. When the sputtering target is produced by sintering raw-material powders at 1,000ºC or lower, SiO2, TiO2, Co3O4, and CoO can be prevented from being reduced during the sintering. Thus, the sputtering target can be obtained as a more effective target.
Inventors:
HAYASHI, Hiromitsu (Engineered Materials Sector, PVD Materials Division, 2081, Oaza Tohsen, Omuta-sh, Fukuoka 03, 〒8360003, JP)
Application Number:
JP2009/071483
Publication Date:
July 01, 2010
Filing Date:
December 24, 2009
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO., LTD. (1-11-1, Osaki Shinagawa-k, Tokyo 84, 〒1418584, JP)
三井金属鉱業株式会社 (〒84 東京都品川区大崎一丁目１１番１号 Tokyo, 〒1418584, JP)
三井金属鉱業株式会社 (〒84 東京都品川区大崎一丁目１１番１号 Tokyo, 〒1418584, JP)
International Classes:
C23C14/34; C22C1/05; C22C19/07; G11B5/851; H01F10/16; H01F41/18; B22F3/14
Attorney, Agent or Firm:
SSINPAT PATENT FIRM (Gotanda Yamazaki Bldg. 6F, 13-6 Nishigotanda 7-chome, Shinagawa-k, Tokyo 31, 〒1410031, JP)
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