SPUTTERING TARGET, METHOD FOR PRODUCING SPUTTERING TARGET, OXIDE THIN FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE

Title:

SPUTTERING TARGET, METHOD FOR PRODUCING SPUTTERING TARGET, OXIDE THIN FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE

Document Type and Number:

WIPO Patent Application WO/2023/189870

Kind Code:

A1

Abstract:

A sputtering target comprising an oxide sintered body containing indium oxide as the main component, wherein the oxide sintered body has a contained hydrogen concentration of 5×1016 atoms/cm3 or greater, the atomic concentration ratio (O element/In element) of indium (In) element and oxygen (O) element is at least 1.3 to less than 2.5, and the density of the oxide sintered body measured by the Archimedes method is 6.0 g/cm3 or greater.

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Inventors:

SASAKI DAICHI (JP)
KAIJO AKIRA (JP)
OYAMA MASASHI (JP)
KAWASHIMA EMI (JP)

Application Number:

PCT/JP2023/011059

Publication Date:

October 05, 2023

Filing Date:

March 22, 2023

Export Citation:

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Assignee:

IDEMITSU KOSAN CO (JP)

International Classes:

C23C14/34; C04B35/01; H01L21/203; H01L21/336; H01L21/363; H01L27/146; H01L29/06; H01L29/66; H01L29/786

Foreign References:

JP2015061953A	2015-04-02
JP2018104743A	2018-07-05

Attorney, Agent or Firm:

KINOSHITA & ASSOCIATES (JP)

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